Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications

This research investigates the morphological, structural, optical, and photoelectrochemical properties of In2O3 nanostructured films synthesized on Si(100) and Ni/Si(100) substrates using the chemical vapor deposition technique at atmospheric pressure under hydrogen reducing ambient, and carbotherma...

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Main Author:	Moses, Aper Terwase
Format:	Thesis
Language:	English
Published:	2022
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/59185/1/APER%20TERWASE%20MOSES%20-%20TESIS24.pdf
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id	my-usm-ep.59185
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spelling	my-usm-ep.591852023-08-18T08:11:30Z Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications 2022-05 Moses, Aper Terwase QC1 Physics (General) This research investigates the morphological, structural, optical, and photoelectrochemical properties of In2O3 nanostructured films synthesized on Si(100) and Ni/Si(100) substrates using the chemical vapor deposition technique at atmospheric pressure under hydrogen reducing ambient, and carbothermal reduction, respectively. The properties of the synthesized films were studied under several growth conditions such as; temperature, gas flow rates, and post-annealing under ammonia ambient. Analysis revealed changes in the surface morphology of the films with variations in growth conditions. EDX measurements showed non-stoichiometric in all the films with an In/O atomic ratio above the stoichiometric value of 0.667, which indicates oxygen deficiency. XRD analysis confirmed the formation of highly crystalline indium oxide nanostructures of the body-centered cubic (bcc) crystal structure with predominate growth in the (222) plane. Samples optical bandgap variation with growth conditions was also observed from analysis of reflectance data. Annealing under ammonia ambient resulted in the formation of N-doped In2O3 nanostructured materials. The photoelectrochemical study performed in a 0.5 M KOH solution revealed an onset potential of 0.72 (V vs. Ag/AgCl) for photoanodic current in the electrodes fabricated under hydrogen reducing ambient with the most efficient photoanode (fabricated at 950 oC), generating a maximum photocurrent density of 2.56 (mA/cm2) 2022-05 Thesis http://eprints.usm.my/59185/ http://eprints.usm.my/59185/1/APER%20TERWASE%20MOSES%20-%20TESIS24.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Moses, Aper Terwase Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications
description	This research investigates the morphological, structural, optical, and photoelectrochemical properties of In2O3 nanostructured films synthesized on Si(100) and Ni/Si(100) substrates using the chemical vapor deposition technique at atmospheric pressure under hydrogen reducing ambient, and carbothermal reduction, respectively. The properties of the synthesized films were studied under several growth conditions such as; temperature, gas flow rates, and post-annealing under ammonia ambient. Analysis revealed changes in the surface morphology of the films with variations in growth conditions. EDX measurements showed non-stoichiometric in all the films with an In/O atomic ratio above the stoichiometric value of 0.667, which indicates oxygen deficiency. XRD analysis confirmed the formation of highly crystalline indium oxide nanostructures of the body-centered cubic (bcc) crystal structure with predominate growth in the (222) plane. Samples optical bandgap variation with growth conditions was also observed from analysis of reflectance data. Annealing under ammonia ambient resulted in the formation of N-doped In2O3 nanostructured materials. The photoelectrochemical study performed in a 0.5 M KOH solution revealed an onset potential of 0.72 (V vs. Ag/AgCl) for photoanodic current in the electrodes fabricated under hydrogen reducing ambient with the most efficient photoanode (fabricated at 950 oC), generating a maximum photocurrent density of 2.56 (mA/cm2)
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Moses, Aper Terwase
author_facet	Moses, Aper Terwase
author_sort	Moses, Aper Terwase
title	Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications
title_short	Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications
title_full	Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications
title_fullStr	Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications
title_full_unstemmed	Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications
title_sort	growth and characterization of indium oxide nanostructured films using solid-to-vapor deposition technique for photoelectrochemical applications
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2022
url	http://eprints.usm.my/59185/1/APER%20TERWASE%20MOSES%20-%20TESIS24.pdf
_version_	1776101263444803584

Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications

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