Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode

This work has focused on the effort of fabricating the deep green light emitting diode (LED). First, the multi-quantum well (MQW) that was expected to be able to emit a deep green wavelength was designed and fabricated. The MQW was first grown on a patterned sapphire substrate due to nucleation laye...

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Main Author:	Abdul Rais, Shamsul Amir
Format:	Thesis
Language:	English
Published:	2022
Subjects:	QD701-731 Photochemistry
Online Access:	http://eprints.usm.my/59799/1/24%20Pages%20from%20SHAMSUL%20AMIR%20BIN%20ABDUL%20RAIS.pdf
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spelling	my-usm-ep.597992024-02-05T00:53:09Z Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode 2022-10 Abdul Rais, Shamsul Amir QD701-731 Photochemistry This work has focused on the effort of fabricating the deep green light emitting diode (LED). First, the multi-quantum well (MQW) that was expected to be able to emit a deep green wavelength was designed and fabricated. The MQW was first grown on a patterned sapphire substrate due to nucleation layer and lattice match which are nearest to the gallium nitride (GaN) substrate. The growth of six pairs of GaN/ InxGa1−xN layer that has 12.16/3.35 nm thickness was successfully carried out. The MQW has low crystal defect even when the indium ratio for InxGa1−xN layer growth was 9 times more than gallium. Previous research shows that a high indium ratio in GaN crystal growth would yield high strain but none of these have been observed. The MQW was later inserted into the full LED structure. The LED was grown on the GaN substrate. The resulting LED has good crystal quality, with dislocation of 8.7x107cm-2 . The photoluminescence (PL) spectrum also gives a good result, 568 nm which is in the deep green region. However, the device needed to be annealed to activate the p-type, and the wavelength blue-shifted greatly, 45nm after the annealing process. This prompted the introduction of the indium pre-flow technique to the later growth of the LED samples. 2022-10 Thesis http://eprints.usm.my/59799/ http://eprints.usm.my/59799/1/24%20Pages%20from%20SHAMSUL%20AMIR%20BIN%20ABDUL%20RAIS.pdf application/pdf en public phd doctoral Perpustakaan Hamzah Sendut Institut Penyelidikan dan Teknologi Nano-Optoelektronik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QD701-731 Photochemistry
spellingShingle	QD701-731 Photochemistry Abdul Rais, Shamsul Amir Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode
description	This work has focused on the effort of fabricating the deep green light emitting diode (LED). First, the multi-quantum well (MQW) that was expected to be able to emit a deep green wavelength was designed and fabricated. The MQW was first grown on a patterned sapphire substrate due to nucleation layer and lattice match which are nearest to the gallium nitride (GaN) substrate. The growth of six pairs of GaN/ InxGa1−xN layer that has 12.16/3.35 nm thickness was successfully carried out. The MQW has low crystal defect even when the indium ratio for InxGa1−xN layer growth was 9 times more than gallium. Previous research shows that a high indium ratio in GaN crystal growth would yield high strain but none of these have been observed. The MQW was later inserted into the full LED structure. The LED was grown on the GaN substrate. The resulting LED has good crystal quality, with dislocation of 8.7x107cm-2 . The photoluminescence (PL) spectrum also gives a good result, 568 nm which is in the deep green region. However, the device needed to be annealed to activate the p-type, and the wavelength blue-shifted greatly, 45nm after the annealing process. This prompted the introduction of the indium pre-flow technique to the later growth of the LED samples.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Abdul Rais, Shamsul Amir
author_facet	Abdul Rais, Shamsul Amir
author_sort	Abdul Rais, Shamsul Amir
title	Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode
title_short	Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode
title_full	Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode
title_fullStr	Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode
title_full_unstemmed	Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode
title_sort	epitaxial growth of gan on gan multi quantum well for the deep green light emitting diode
granting_institution	Perpustakaan Hamzah Sendut
granting_department	Institut Penyelidikan dan Teknologi Nano-Optoelektronik
publishDate	2022
url	http://eprints.usm.my/59799/1/24%20Pages%20from%20SHAMSUL%20AMIR%20BIN%20ABDUL%20RAIS.pdf
_version_	1794024058048741376

Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode

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