Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb].
Dalam kajian ini, Pt, Pd, Ag dan Ni dimendapkan ke atas GaN dan AlGaN jenis p dan jenis n sebagai sentuhan logam mangkinan dengan menggunakan sistem percikan menerusi topeng logam bagi mengesan gas N2, H2 dan CH4 dengan kepekatan dan ketebalan logam yang berbeza dalam julat dari 50 hinga 300nm. Kemu...
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my-usm-ep.86352017-03-22T02:23:55Z Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb]. 2005-12 Omer Hudeish, Abdo Yahya TK7800-8360 Electronics Dalam kajian ini, Pt, Pd, Ag dan Ni dimendapkan ke atas GaN dan AlGaN jenis p dan jenis n sebagai sentuhan logam mangkinan dengan menggunakan sistem percikan menerusi topeng logam bagi mengesan gas N2, H2 dan CH4 dengan kepekatan dan ketebalan logam yang berbeza dalam julat dari 50 hinga 300nm. Kemudian, sampel diberi terma yang berbeza dari 500-1000oC selama 5 minit dalam gas argon bagi ciri pengesanan. In this work, Pt, Pd, Ag and Ni were deposited on p type and n type of GaN and AlGaN as catalytic metals contact using sputtering system through metal mask to detect N2, H2 and CH4 gases with different concentrations and different metal thicknesses with a range of 50-300nm. Samples were annealed at various temperatures from 500°C up to 1000°C for 5 min in argon prior to sensing charactersation. 2005-12 Thesis http://eprints.usm.my/8635/ http://eprints.usm.my/8635/1/GALLIUM_NITRIDE_%28GaN%29_BASED_GAS_SENSOR.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik |
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TK7800-8360 Electronics Omer Hudeish, Abdo Yahya Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb]. |
description |
Dalam kajian ini, Pt, Pd, Ag dan Ni dimendapkan ke atas GaN dan AlGaN jenis p dan jenis n sebagai sentuhan logam mangkinan dengan menggunakan sistem percikan menerusi topeng logam bagi mengesan gas N2, H2 dan CH4 dengan kepekatan dan ketebalan logam yang berbeza dalam julat dari 50 hinga 300nm. Kemudian, sampel diberi terma yang berbeza dari 500-1000oC selama 5 minit dalam gas argon bagi ciri
pengesanan.
In this work, Pt, Pd, Ag and Ni were deposited on p type and n type of GaN and AlGaN as catalytic metals contact using sputtering system through metal mask to detect N2,
H2 and CH4 gases with different concentrations and different metal thicknesses with a range of 50-300nm. Samples were annealed at various temperatures from 500°C up to 1000°C for 5 min in argon prior to sensing charactersation.
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format |
Thesis |
qualification_name |
Doctor of Philosophy (PhD.) |
qualification_level |
Doctorate |
author |
Omer Hudeish, Abdo Yahya |
author_facet |
Omer Hudeish, Abdo Yahya |
author_sort |
Omer Hudeish, Abdo Yahya |
title |
Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb]. |
title_short |
Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb]. |
title_full |
Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb]. |
title_fullStr |
Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb]. |
title_full_unstemmed |
Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb]. |
title_sort |
gallium nitride (gan) based gas sensor using catalytic metal [tk7871.15.g33 h884 2005 f rb]. |
granting_institution |
Universiti Sains Malaysia |
granting_department |
Pusat Pengajian Sains Fizik |
publishDate |
2005 |
url |
http://eprints.usm.my/8635/1/GALLIUM_NITRIDE_%28GaN%29_BASED_GAS_SENSOR.pdf |
_version_ |
1747819715464527872 |