Optimization of titanium dioxide (TiO2) thin film using dip coating technique for oxygen gas sensor

Titanium dioxide (TiO2) thin film gas sensors have been widely used and investigated in the detection of target gases. However, to obtain anatase phase for oxygen gas sensor with low and short annealing temperature is the obstacle in the fabrication of oxygen gas sensor. It is thus desirable to d...

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主要作者: Bakri, Anis Suhaili
格式: Thesis
语言:English
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出版: 2017
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spelling my-uthm-ep.7432021-08-30T07:45:39Z Optimization of titanium dioxide (TiO2) thin film using dip coating technique for oxygen gas sensor 2017-12 Bakri, Anis Suhaili QD146-197 Inorganic chemistry Titanium dioxide (TiO2) thin film gas sensors have been widely used and investigated in the detection of target gases. However, to obtain anatase phase for oxygen gas sensor with low and short annealing temperature is the obstacle in the fabrication of oxygen gas sensor. It is thus desirable to develop TiO2 thin film preparation technique that provides the anatase phase for oxygen gas sensor at low and short annealing temperature. In this study, the dip coating method was used to fabricate the TiO2 thin film. The parameters such as deposition layer, withdrawal speed of dip coating and annealing temperature were varied to optimize the properties of thin film. The optimum parameters are obtained from the 1 layer deposition film, 10 mm/ min withdrawal speed of dip coating, and annealed the film at 400 °C in electrical furnace. Crystal structure studies showed that the optimized TiO2 thin film is anatase phase with tetragonal lattice structure and (101) plane is the dominant peak. Morphological studies indicated that the film is even and uniform in manner with grain size of 13.3 nm. The crystallite size obtained from HIGHSCORE software is 69.02 nm and calculated crystallite size using Scherrer’s equation is 55.7 nm. The electrical studies showed that the film resistivity is 1.64 x 10 -3 Ω.cm. The gas sensor measurement revealed that the response and recovery time of TiO2 thin film sensor at room temperature is about 13.22 s and 2.67 s, respectively. Thus, proving that the potential to use the TiO2 thin film fabricated by dip coating as active layer in oxygen gas sensor. 2017-12 Thesis http://eprints.uthm.edu.my/743/ http://eprints.uthm.edu.my/743/1/24p%20ANIS%20SUHAILI%20BAKRI.pdf text en public http://eprints.uthm.edu.my/743/2/ANIS%20SUHAILI%20BAKRI%20COPYRIGHT%20DECLARATION.pdf text en staffonly http://eprints.uthm.edu.my/743/3/ANIS%20SUHAILI%20BAKRI%20WATERMARK.pdf text en validuser mphil masters Universiti Tun Hussein Onn Malaysia Fakulti Kejuruteraan Elektrik dan Elektronik
institution Universiti Tun Hussein Onn Malaysia
collection UTHM Institutional Repository
language English
English
English
topic QD146-197 Inorganic chemistry
spellingShingle QD146-197 Inorganic chemistry
Bakri, Anis Suhaili
Optimization of titanium dioxide (TiO2) thin film using dip coating technique for oxygen gas sensor
description Titanium dioxide (TiO2) thin film gas sensors have been widely used and investigated in the detection of target gases. However, to obtain anatase phase for oxygen gas sensor with low and short annealing temperature is the obstacle in the fabrication of oxygen gas sensor. It is thus desirable to develop TiO2 thin film preparation technique that provides the anatase phase for oxygen gas sensor at low and short annealing temperature. In this study, the dip coating method was used to fabricate the TiO2 thin film. The parameters such as deposition layer, withdrawal speed of dip coating and annealing temperature were varied to optimize the properties of thin film. The optimum parameters are obtained from the 1 layer deposition film, 10 mm/ min withdrawal speed of dip coating, and annealed the film at 400 °C in electrical furnace. Crystal structure studies showed that the optimized TiO2 thin film is anatase phase with tetragonal lattice structure and (101) plane is the dominant peak. Morphological studies indicated that the film is even and uniform in manner with grain size of 13.3 nm. The crystallite size obtained from HIGHSCORE software is 69.02 nm and calculated crystallite size using Scherrer’s equation is 55.7 nm. The electrical studies showed that the film resistivity is 1.64 x 10 -3 Ω.cm. The gas sensor measurement revealed that the response and recovery time of TiO2 thin film sensor at room temperature is about 13.22 s and 2.67 s, respectively. Thus, proving that the potential to use the TiO2 thin film fabricated by dip coating as active layer in oxygen gas sensor.
format Thesis
qualification_name Master of Philosophy (M.Phil.)
qualification_level Master's degree
author Bakri, Anis Suhaili
author_facet Bakri, Anis Suhaili
author_sort Bakri, Anis Suhaili
title Optimization of titanium dioxide (TiO2) thin film using dip coating technique for oxygen gas sensor
title_short Optimization of titanium dioxide (TiO2) thin film using dip coating technique for oxygen gas sensor
title_full Optimization of titanium dioxide (TiO2) thin film using dip coating technique for oxygen gas sensor
title_fullStr Optimization of titanium dioxide (TiO2) thin film using dip coating technique for oxygen gas sensor
title_full_unstemmed Optimization of titanium dioxide (TiO2) thin film using dip coating technique for oxygen gas sensor
title_sort optimization of titanium dioxide (tio2) thin film using dip coating technique for oxygen gas sensor
granting_institution Universiti Tun Hussein Onn Malaysia
granting_department Fakulti Kejuruteraan Elektrik dan Elektronik
publishDate 2017
url http://eprints.uthm.edu.my/743/1/24p%20ANIS%20SUHAILI%20BAKRI.pdf
http://eprints.uthm.edu.my/743/2/ANIS%20SUHAILI%20BAKRI%20COPYRIGHT%20DECLARATION.pdf
http://eprints.uthm.edu.my/743/3/ANIS%20SUHAILI%20BAKRI%20WATERMARK.pdf
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