Zinc oxide nanostructures: the effect of deposition parameters on the electrical properties using sol-gel method

Nanostructured Zinc Oxide (ZnO) has been deposited on Silicon Dioxide (Si02) using sol-gel method. The Si02 was grown on Silicon (Si) using dry oxidation process in 1 atrn ambient. In sol-gel method. a lot of deposition parameters need to be considered to remain the uniformity v and reproduc...

Full description

Saved in:

Bibliographic Details
Main Author:	Kamaruddin, Sharul Ashikin
Format:	Thesis
Language:	English English English
Published:	2008
Subjects:	TA Engineering (General) Civil engineering (General)
Online Access:	http://eprints.uthm.edu.my/7452/1/24p%20SHARMILI%20MOHAMED%20RAFI.pdf http://eprints.uthm.edu.my/7452/2/SHARMILI%20MOHAMED%20RAFI%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/7452/3/SHARMILI%20MOHAMED%20RAFI%20WATERMARK.pdf
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-uthm-ep.7452
record_format	uketd_dc
spelling	my-uthm-ep.74522022-07-24T03:48:06Z Zinc oxide nanostructures: the effect of deposition parameters on the electrical properties using sol-gel method 2008-12 Kamaruddin, Sharul Ashikin TA Engineering (General). Civil engineering (General) TA401-492 Materials of engineering and construction. Mechanics of materials Nanostructured Zinc Oxide (ZnO) has been deposited on Silicon Dioxide (Si02) using sol-gel method. The Si02 was grown on Silicon (Si) using dry oxidation process in 1 atrn ambient. In sol-gel method. a lot of deposition parameters need to be considered to remain the uniformity v and reproducibility. Any small changes in the deposition parameters will affect the surface morphologies, electrical properties and optical properties as well. This research is done to study the deposition parameters on the electrical properties and supported by the surface morphologies and optical properties which have strong correlation. There are four deposition method have been focused in this study which are the immerse time, Si02 thickness, annealing temperature and the precursor solution concentration. The results have been characterized using scanning electron microscope (SEM) for the structural properties, X-ray diffractometer (XRD) for the growth orientation and IV measurement system for the electrical properties. The optical properties have been characterized using photoluminescence and UV -VIS spectrometer. Immerse time at 3 hours shows optimum electrical IV response. The Si02 thickness when oxidized at 5 minutes has optimum structural, clectrical and optical propcl1ics. Annealing thc sample at 500°C has the optimum IV response but for the optical properties, the best annealing temperature is at 550°C. The precursor solution concentration at 0.0001 M has optimum IV response but for the optimum optical properties, 0.01 M has the best response. At the end of this study, the optimized deposition parameters in sol-gel method to deposit nanostrLlctured ZnO has been obtained. The result will be a contribution for the next researcher to study other parameters using sol-gel method. 2008-12 Thesis http://eprints.uthm.edu.my/7452/ http://eprints.uthm.edu.my/7452/1/24p%20SHARMILI%20MOHAMED%20RAFI.pdf text en public http://eprints.uthm.edu.my/7452/2/SHARMILI%20MOHAMED%20RAFI%20COPYRIGHT%20DECLARATION.pdf text en staffonly http://eprints.uthm.edu.my/7452/3/SHARMILI%20MOHAMED%20RAFI%20WATERMARK.pdf text en validuser mphil masters Universiti Tun Hussein Onn Malaysia Fakulti Kejuruteraan Elektrik dan Elektronik
institution	Universiti Tun Hussein Onn Malaysia
collection	UTHM Institutional Repository
language	English English English
topic	TA Engineering (General) Civil engineering (General) TA Engineering (General) Civil engineering (General)
spellingShingle	TA Engineering (General) Civil engineering (General) TA Engineering (General) Civil engineering (General) Kamaruddin, Sharul Ashikin Zinc oxide nanostructures: the effect of deposition parameters on the electrical properties using sol-gel method
description	Nanostructured Zinc Oxide (ZnO) has been deposited on Silicon Dioxide (Si02) using sol-gel method. The Si02 was grown on Silicon (Si) using dry oxidation process in 1 atrn ambient. In sol-gel method. a lot of deposition parameters need to be considered to remain the uniformity v and reproducibility. Any small changes in the deposition parameters will affect the surface morphologies, electrical properties and optical properties as well. This research is done to study the deposition parameters on the electrical properties and supported by the surface morphologies and optical properties which have strong correlation. There are four deposition method have been focused in this study which are the immerse time, Si02 thickness, annealing temperature and the precursor solution concentration. The results have been characterized using scanning electron microscope (SEM) for the structural properties, X-ray diffractometer (XRD) for the growth orientation and IV measurement system for the electrical properties. The optical properties have been characterized using photoluminescence and UV -VIS spectrometer. Immerse time at 3 hours shows optimum electrical IV response. The Si02 thickness when oxidized at 5 minutes has optimum structural, clectrical and optical propcl1ics. Annealing thc sample at 500°C has the optimum IV response but for the optical properties, the best annealing temperature is at 550°C. The precursor solution concentration at 0.0001 M has optimum IV response but for the optimum optical properties, 0.01 M has the best response. At the end of this study, the optimized deposition parameters in sol-gel method to deposit nanostrLlctured ZnO has been obtained. The result will be a contribution for the next researcher to study other parameters using sol-gel method.
format	Thesis
qualification_name	Master of Philosophy (M.Phil.)
qualification_level	Master's degree
author	Kamaruddin, Sharul Ashikin
author_facet	Kamaruddin, Sharul Ashikin
author_sort	Kamaruddin, Sharul Ashikin
title	Zinc oxide nanostructures: the effect of deposition parameters on the electrical properties using sol-gel method
title_short	Zinc oxide nanostructures: the effect of deposition parameters on the electrical properties using sol-gel method
title_full	Zinc oxide nanostructures: the effect of deposition parameters on the electrical properties using sol-gel method
title_fullStr	Zinc oxide nanostructures: the effect of deposition parameters on the electrical properties using sol-gel method
title_full_unstemmed	Zinc oxide nanostructures: the effect of deposition parameters on the electrical properties using sol-gel method
title_sort	zinc oxide nanostructures: the effect of deposition parameters on the electrical properties using sol-gel method
granting_institution	Universiti Tun Hussein Onn Malaysia
granting_department	Fakulti Kejuruteraan Elektrik dan Elektronik
publishDate	2008
url	http://eprints.uthm.edu.my/7452/1/24p%20SHARMILI%20MOHAMED%20RAFI.pdf http://eprints.uthm.edu.my/7452/2/SHARMILI%20MOHAMED%20RAFI%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/7452/3/SHARMILI%20MOHAMED%20RAFI%20WATERMARK.pdf
_version_	1747831153350410240

Zinc oxide nanostructures: the effect of deposition parameters on the electrical properties using sol-gel method

Similar Items