Fabrication of cu2o based homostructure thin films using electrodeposition method

Copper oxide (Cu2O) is one of inorganic materials used in photovoltaic (PV) technology. It was reported that Cu2O that acts as the p-n junction semiconductor material was preferable in extensive studies for solar cell application. However, the heterojunction interface between p-type Cu2O to other ma...

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Main Author:	Mohamad Arifi, Nurliyana
Format:	Thesis
Language:	English English English
Published:	2018
Subjects:	TA Engineering (General) Civil engineering (General)
Online Access:	http://eprints.uthm.edu.my/7539/1/24p%20NURLIYANA%20MOHAMAD%20ARIFIN.pdf http://eprints.uthm.edu.my/7539/2/NURLIYANA%20MOHAMAD%20ARIFIN%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/7539/3/NURLIYANA%20MOHAMAD%20ARIFIN%20WATERMARK.pdf
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spelling	my-uthm-ep.75392022-08-21T01:42:54Z Fabrication of cu2o based homostructure thin films using electrodeposition method 2018-03 Mohamad Arifi, Nurliyana TA Engineering (General). Civil engineering (General) TA401-492 Materials of engineering and construction. Mechanics of materials Copper oxide (Cu2O) is one of inorganic materials used in photovoltaic (PV) technology. It was reported that Cu2O that acts as the p-n junction semiconductor material was preferable in extensive studies for solar cell application. However, the heterojunction interface between p-type Cu2O to other materials has lower conversion efficiency due to lattice mismatch. Thus, a p-n Cu2O homojunction thin film had been introduced to acquire higher efficiency due to similar interface which can promote less defects between layers. In this experiment, both n and p-type Cu2O thin film was fabricated by using copper acetate based solution through electrodeposition method. Firstly, the effects of pH value and deposition time were optimized for fabrication of n-type Cu2O thin film on fluorine doped thin oxide (FTO) glass. The deposition potential optimization was conducted using Cyclic Voltammetry Measurement. Then, the effects of bath temperature and deposition time were optimized for p-type Cu2O on n-type Cu2O/FTO substrate to obtain p-type based homostructure. Structural, morphological, topological and optical properties were characterized by using Cyclic Voltammetry, X-ray diffraction (XRD), Field Emission-Scanning Electron Microscope (FE-SEM), Atomic Force Microscopy (AFM) and Ultraviolet-Visible Absorption Spectroscopy (UV-Vis), respectively. The conduction type for n-type and p-type Cu2O thin film also have been characterized by using Photoelectrochemical Measurement (PEC). The optimum parameters obtained for n-type Cu2O were pH of 6.3, deposition time of 30 minutes, bath temperature of 60 °C and deposition potential of -0.125V vs Ag/AgCl. Meanwhile, the optimum parameters for fabrication of p-type Cu2O on n-type Cu2O/FTO susbstrate were pH of 12.5, deposition time of 2 hours, bath temperature of 40 °C and potential deposition of -0.4 V vs Ag/ AgCl. The p-type Cu2O based homostructure thin film was successfully fabricated and can be implemented in fabrication of Cu2O homojunction thin film in photovoltaic for solar cell. 2018-03 Thesis http://eprints.uthm.edu.my/7539/ http://eprints.uthm.edu.my/7539/1/24p%20NURLIYANA%20MOHAMAD%20ARIFIN.pdf text en public http://eprints.uthm.edu.my/7539/2/NURLIYANA%20MOHAMAD%20ARIFIN%20COPYRIGHT%20DECLARATION.pdf text en staffonly http://eprints.uthm.edu.my/7539/3/NURLIYANA%20MOHAMAD%20ARIFIN%20WATERMARK.pdf text en validuser mphil masters Universiti Tun Hussein Onn Malaysia Fakulti Kejuruteraan Elektrik dan Elektronik
institution	Universiti Tun Hussein Onn Malaysia
collection	UTHM Institutional Repository
language	English English English
topic	TA Engineering (General) Civil engineering (General) TA Engineering (General) Civil engineering (General)
spellingShingle	TA Engineering (General) Civil engineering (General) TA Engineering (General) Civil engineering (General) Mohamad Arifi, Nurliyana Fabrication of cu2o based homostructure thin films using electrodeposition method
description	Copper oxide (Cu2O) is one of inorganic materials used in photovoltaic (PV) technology. It was reported that Cu2O that acts as the p-n junction semiconductor material was preferable in extensive studies for solar cell application. However, the heterojunction interface between p-type Cu2O to other materials has lower conversion efficiency due to lattice mismatch. Thus, a p-n Cu2O homojunction thin film had been introduced to acquire higher efficiency due to similar interface which can promote less defects between layers. In this experiment, both n and p-type Cu2O thin film was fabricated by using copper acetate based solution through electrodeposition method. Firstly, the effects of pH value and deposition time were optimized for fabrication of n-type Cu2O thin film on fluorine doped thin oxide (FTO) glass. The deposition potential optimization was conducted using Cyclic Voltammetry Measurement. Then, the effects of bath temperature and deposition time were optimized for p-type Cu2O on n-type Cu2O/FTO substrate to obtain p-type based homostructure. Structural, morphological, topological and optical properties were characterized by using Cyclic Voltammetry, X-ray diffraction (XRD), Field Emission-Scanning Electron Microscope (FE-SEM), Atomic Force Microscopy (AFM) and Ultraviolet-Visible Absorption Spectroscopy (UV-Vis), respectively. The conduction type for n-type and p-type Cu2O thin film also have been characterized by using Photoelectrochemical Measurement (PEC). The optimum parameters obtained for n-type Cu2O were pH of 6.3, deposition time of 30 minutes, bath temperature of 60 °C and deposition potential of -0.125V vs Ag/AgCl. Meanwhile, the optimum parameters for fabrication of p-type Cu2O on n-type Cu2O/FTO susbstrate were pH of 12.5, deposition time of 2 hours, bath temperature of 40 °C and potential deposition of -0.4 V vs Ag/ AgCl. The p-type Cu2O based homostructure thin film was successfully fabricated and can be implemented in fabrication of Cu2O homojunction thin film in photovoltaic for solar cell.
format	Thesis
qualification_name	Master of Philosophy (M.Phil.)
qualification_level	Master's degree
author	Mohamad Arifi, Nurliyana
author_facet	Mohamad Arifi, Nurliyana
author_sort	Mohamad Arifi, Nurliyana
title	Fabrication of cu2o based homostructure thin films using electrodeposition method
title_short	Fabrication of cu2o based homostructure thin films using electrodeposition method
title_full	Fabrication of cu2o based homostructure thin films using electrodeposition method
title_fullStr	Fabrication of cu2o based homostructure thin films using electrodeposition method
title_full_unstemmed	Fabrication of cu2o based homostructure thin films using electrodeposition method
title_sort	fabrication of cu2o based homostructure thin films using electrodeposition method
granting_institution	Universiti Tun Hussein Onn Malaysia
granting_department	Fakulti Kejuruteraan Elektrik dan Elektronik
publishDate	2018
url	http://eprints.uthm.edu.my/7539/1/24p%20NURLIYANA%20MOHAMAD%20ARIFIN.pdf http://eprints.uthm.edu.my/7539/2/NURLIYANA%20MOHAMAD%20ARIFIN%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/7539/3/NURLIYANA%20MOHAMAD%20ARIFIN%20WATERMARK.pdf
_version_	1747831165377576960

Fabrication of cu2o based homostructure thin films using electrodeposition method

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