Characterisation of ballistic carbon nanotube field-effect transistor
Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the perfonnance of silicon transistor with reduction of its size. However, the scaling process will eventually reaches its limit and by that time a new group of devices are expected to replace MOSFET...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
2005
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| Subjects: | |
| Online Access: | http://eprints.uthm.edu.my/7727/1/24p%20RAHMAT%20SANUDIN.pdf |
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| Summary: | Scaling process of silicon transistor, particularly MOSFET, in the past
decades had increased the perfonnance of silicon transistor with reduction of its size.
However, the scaling process will eventually reaches its limit and by that time a new
group of devices are expected to replace MOSFET in digital applications. This group
of devices, known as nanoelectronic devices, is expected to offer better device
geometry in nanometre scale with superior perfonnance. Carbon nanotube field�effect transistor (CNFET), one of nanoelectronic devices, is a transistor with its
channel is made of carbon nanotube and it is designed to provide the solution for
scaling process and the possibility of coexistence with current silicon technology.
The purpose of this project is to study the behaviour ofCNFET and the main focus is
on the simulation of its current-voltage (I-V) characteristic. The simulation study is
carried out using MATLAB program and the result obtained is used to compare the
device performance with MOSFET. Further analysis is also made to see the effect of
oxide thickness and carbon nanotube diameter on the device perfonnance, in
particular the drain current. From the simulation study, it is concluded that the
perfonnance of CNFET has no significant advantage over MOSFET and its
perfonnance is also affected by both nanotube diameter and oxide thickness. |
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