Device simulation of the electrical characteristics in 14nm gaussian channel junctionless finfet
In conventional FinFET, it becomes difficult to define the doping concentration of material over a distance shorter than 10nm and produce high-quality junctions for sub 20nm regime which leads to short channel effects. Hence, Junctionless FinFET which offers architecture, free from any p-n junction...
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2022
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| 主题: | |
| 在线阅读: | http://eprints.utm.my/id/eprint/102170/1/MathangiRamakrishnanMSKE2022.pdf.pdf |
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