Device simulation of the electrical characteristics in 14nm gaussian channel junctionless finfet

In conventional FinFET, it becomes difficult to define the doping concentration of material over a distance shorter than 10nm and produce high-quality junctions for sub 20nm regime which leads to short channel effects. Hence, Junctionless FinFET which offers architecture, free from any p-n junction...

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主要作者: Ramakrishnan, Mathangi
格式: Thesis
语言:English
出版: 2022
主题:
在线阅读:http://eprints.utm.my/id/eprint/102170/1/MathangiRamakrishnanMSKE2022.pdf.pdf
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