Device simulation of the electrical characteristics in 14nm gaussian channel junctionless finfet
In conventional FinFET, it becomes difficult to define the doping concentration of material over a distance shorter than 10nm and produce high-quality junctions for sub 20nm regime which leads to short channel effects. Hence, Junctionless FinFET which offers architecture, free from any p-n junction...
Saved in:
| 主要作者: | |
|---|---|
| 格式: | Thesis |
| 語言: | English |
| 出版: |
2022
|
| 主題: | |
| 在線閱讀: | http://eprints.utm.my/id/eprint/102170/1/MathangiRamakrishnanMSKE2022.pdf.pdf |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|