Improved characteristics of radio frequency interdigital capacitor

Technology advances in complimentary-metal-oxide-silicon (CMOS) process offer some interesting possibilities for radio frequency (RF) circuit designers. Some circuits that would have to be done with GaAs monolithic microwave integrated circuits (MMICs), for instance, are now possible in CMOS. While...

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Main Author:	Lim, Yun Rou
Format:	Thesis
Language:	English
Published:	2006
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/107/1/LimYunRouMFKE2006.pdf
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spelling	my-utm-ep.1072018-01-10T07:52:56Z Improved characteristics of radio frequency interdigital capacitor 2006-04-29 Lim, Yun Rou TK Electrical engineering. Electronics Nuclear engineering Technology advances in complimentary-metal-oxide-silicon (CMOS) process offer some interesting possibilities for radio frequency (RF) circuit designers. Some circuits that would have to be done with GaAs monolithic microwave integrated circuits (MMICs), for instance, are now possible in CMOS. While the transistor speed has been improving significantly, fuller integration of RF integrated circuits (RFICs) is often retarded by the absence of high quality, high rangebility and efficient on-chip passive components. This thesis presents the possibilities of improving the characteristics of an RF capacitor having interdigital configuration. Modifications in the form of combline structure were introduced into the conventional configuration to improve the capacitor characteristics. Performance in the form of capacitance and Quality, Q, factor were investigated through simulations using electromagnetic simulation software, Ansoft HFSS. The analysis and comparison between conventional and the proposed interdigital capacitor (IDC) with combline structure were discussed in detail. It can be concluded that the proposed IDC with combline structure improves the capacitance of an IDC. The optimum combline configuration which achieved useful capacitance with sufficiently high Q factor is the design with 110 mils effective finger length. It produces 5.48 pF capacitance at first resonance of 2 GHz, with sufficiently high Q factor of 13.88. This is a factor of 1.72 higher than the corresponding conventional IDC having 3.18 pF at first resonance of 3 GHz albeit 10 % slightly higher Q factor of 15.41. 2006-04 Thesis http://eprints.utm.my/id/eprint/107/ http://eprints.utm.my/id/eprint/107/1/LimYunRouMFKE2006.pdf application/pdf en public masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Lim, Yun Rou Improved characteristics of radio frequency interdigital capacitor
description	Technology advances in complimentary-metal-oxide-silicon (CMOS) process offer some interesting possibilities for radio frequency (RF) circuit designers. Some circuits that would have to be done with GaAs monolithic microwave integrated circuits (MMICs), for instance, are now possible in CMOS. While the transistor speed has been improving significantly, fuller integration of RF integrated circuits (RFICs) is often retarded by the absence of high quality, high rangebility and efficient on-chip passive components. This thesis presents the possibilities of improving the characteristics of an RF capacitor having interdigital configuration. Modifications in the form of combline structure were introduced into the conventional configuration to improve the capacitor characteristics. Performance in the form of capacitance and Quality, Q, factor were investigated through simulations using electromagnetic simulation software, Ansoft HFSS. The analysis and comparison between conventional and the proposed interdigital capacitor (IDC) with combline structure were discussed in detail. It can be concluded that the proposed IDC with combline structure improves the capacitance of an IDC. The optimum combline configuration which achieved useful capacitance with sufficiently high Q factor is the design with 110 mils effective finger length. It produces 5.48 pF capacitance at first resonance of 2 GHz, with sufficiently high Q factor of 13.88. This is a factor of 1.72 higher than the corresponding conventional IDC having 3.18 pF at first resonance of 3 GHz albeit 10 % slightly higher Q factor of 15.41.
format	Thesis
qualification_level	Master's degree
author	Lim, Yun Rou
author_facet	Lim, Yun Rou
author_sort	Lim, Yun Rou
title	Improved characteristics of radio frequency interdigital capacitor
title_short	Improved characteristics of radio frequency interdigital capacitor
title_full	Improved characteristics of radio frequency interdigital capacitor
title_fullStr	Improved characteristics of radio frequency interdigital capacitor
title_full_unstemmed	Improved characteristics of radio frequency interdigital capacitor
title_sort	improved characteristics of radio frequency interdigital capacitor
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2006
url	http://eprints.utm.my/id/eprint/107/1/LimYunRouMFKE2006.pdf
_version_	1747814344758919168

Improved characteristics of radio frequency interdigital capacitor

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