Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET)

The thesis presents the study of the basic electrical characteristics changes oa a Metal-Oxide-Semiconductor Field Effect Transistor due to the radiation of Gamma rays and neutron.The analysis which been carried out were more emphesis on current-voltage characteristic before and after expose to radi...

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Main Author:	Jusoh, Kamal Ariffin
Format:	Thesis
Language:	English
Published:	2005
Subjects:	Q Science (General)
Online Access:	http://eprints.utm.my/id/eprint/3482/1/KamalAriffinJusohMFS2005.pdf
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id	my-utm-ep.3482
record_format	uketd_dc
spelling	my-utm-ep.34822018-06-25T01:04:37Z Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET) 2005-09 Jusoh, Kamal Ariffin Q Science (General) The thesis presents the study of the basic electrical characteristics changes oa a Metal-Oxide-Semiconductor Field Effect Transistor due to the radiation of Gamma rays and neutron.The analysis which been carried out were more emphesis on current-voltage characteristic before and after expose to radiation. Transistor used in the study were nLDD-MOSFET (n Lightly Doped Drain MOSFET) type. The transistor technology were from SCMOS 2/RT 0.6 Âµm prototype MATRA-MHS_TEMIC. SMU Keithley 236 were used as a measurement source and the data were analysed by Microcal Origin 3.5 softwere. In this analysis, the characteristic changes of the current drain-source towards voltage gate-source and the current drain source towards voltage drain source were taken as a data before and after expose being exposed to radiation. The data then were analysed and concluded in term of the changes of its electrical charecteristics inline with the theory that were discussed in the previous chapter 2005-09 Thesis http://eprints.utm.my/id/eprint/3482/ http://eprints.utm.my/id/eprint/3482/1/KamalAriffinJusohMFS2005.pdf application/pdf en public masters Universiti Teknologi Malaysia, Faculty of Science Faculty Science
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	Q Science (General)
spellingShingle	Q Science (General) Jusoh, Kamal Ariffin Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET)
description	The thesis presents the study of the basic electrical characteristics changes oa a Metal-Oxide-Semiconductor Field Effect Transistor due to the radiation of Gamma rays and neutron.The analysis which been carried out were more emphesis on current-voltage characteristic before and after expose to radiation. Transistor used in the study were nLDD-MOSFET (n Lightly Doped Drain MOSFET) type. The transistor technology were from SCMOS 2/RT 0.6 Âµm prototype MATRA-MHS_TEMIC. SMU Keithley 236 were used as a measurement source and the data were analysed by Microcal Origin 3.5 softwere. In this analysis, the characteristic changes of the current drain-source towards voltage gate-source and the current drain source towards voltage drain source were taken as a data before and after expose being exposed to radiation. The data then were analysed and concluded in term of the changes of its electrical charecteristics inline with the theory that were discussed in the previous chapter
format	Thesis
qualification_level	Master's degree
author	Jusoh, Kamal Ariffin
author_facet	Jusoh, Kamal Ariffin
author_sort	Jusoh, Kamal Ariffin
title	Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET)
title_short	Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET)
title_full	Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET)
title_fullStr	Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET)
title_full_unstemmed	Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET)
title_sort	kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (mosfet)
granting_institution	Universiti Teknologi Malaysia, Faculty of Science
granting_department	Faculty Science
publishDate	2005
url	http://eprints.utm.my/id/eprint/3482/1/KamalAriffinJusohMFS2005.pdf
_version_	1747814450725912576

Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET)

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