Characterisation of ballistic carbon nanotube field-effect transistor

Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the performance of silicon transistor with reduction of its size. However, the scaling process will eventually reaches its limit and by that time a new group of devices are expected to replace MOSFET in dig...

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Main Author:	Sanudin, Rahmat
Format:	Thesis
Language:	English
Published:	2005
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/3488/1/RahmatSanudinMFKE2005.pdf
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id	my-utm-ep.3488
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spelling	my-utm-ep.34882018-06-25T01:04:44Z Characterisation of ballistic carbon nanotube field-effect transistor 2005-11 Sanudin, Rahmat TK Electrical engineering. Electronics Nuclear engineering Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the performance of silicon transistor with reduction of its size. However, the scaling process will eventually reaches its limit and by that time a new group of devices are expected to replace MOSFET in digital applications. This group of devices, known as nanoelectronic devices, is expected to offer better device geometry in nanometre scale with superior performance. Carbon nanotube fieldeffect transistor (CNFET), one of nanoelectronic devices, is a transistor with its channel is made of carbon nanotube and it is designed to provide the solution for scaling process and the possibility of coexistence with current silicon technology. The purpose of this project is to study the behaviour of CNFET and the main focus is on the simulation of its current-voltage (I-V) characteristic. The simulation study is carried out using MATLAB program and the result obtained is used to compare the device performance with MOSFET. Further analysis is also made to see the effect of oxide thickness and carbon nanotube diameter on the device performance, in particular the drain current. From the simulation study, it is concluded that the performance of CNFET has no significant advantage over MOSFET and its performance is also affected by both nanotube diameter and oxide thickness 2005-11 Thesis http://eprints.utm.my/id/eprint/3488/ http://eprints.utm.my/id/eprint/3488/1/RahmatSanudinMFKE2005.pdf application/pdf en public masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Sanudin, Rahmat Characterisation of ballistic carbon nanotube field-effect transistor
description	Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the performance of silicon transistor with reduction of its size. However, the scaling process will eventually reaches its limit and by that time a new group of devices are expected to replace MOSFET in digital applications. This group of devices, known as nanoelectronic devices, is expected to offer better device geometry in nanometre scale with superior performance. Carbon nanotube fieldeffect transistor (CNFET), one of nanoelectronic devices, is a transistor with its channel is made of carbon nanotube and it is designed to provide the solution for scaling process and the possibility of coexistence with current silicon technology. The purpose of this project is to study the behaviour of CNFET and the main focus is on the simulation of its current-voltage (I-V) characteristic. The simulation study is carried out using MATLAB program and the result obtained is used to compare the device performance with MOSFET. Further analysis is also made to see the effect of oxide thickness and carbon nanotube diameter on the device performance, in particular the drain current. From the simulation study, it is concluded that the performance of CNFET has no significant advantage over MOSFET and its performance is also affected by both nanotube diameter and oxide thickness
format	Thesis
qualification_level	Master's degree
author	Sanudin, Rahmat
author_facet	Sanudin, Rahmat
author_sort	Sanudin, Rahmat
title	Characterisation of ballistic carbon nanotube field-effect transistor
title_short	Characterisation of ballistic carbon nanotube field-effect transistor
title_full	Characterisation of ballistic carbon nanotube field-effect transistor
title_fullStr	Characterisation of ballistic carbon nanotube field-effect transistor
title_full_unstemmed	Characterisation of ballistic carbon nanotube field-effect transistor
title_sort	characterisation of ballistic carbon nanotube field-effect transistor
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2005
url	http://eprints.utm.my/id/eprint/3488/1/RahmatSanudinMFKE2005.pdf
_version_	1747814452184481792

Characterisation of ballistic carbon nanotube field-effect transistor

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