Modeling and simulation of bilayer graphene nanoribbon field effect transistor

The unique structure and electronic properties of Bilayer Graphene Nanoribbon (BLG) such as long mean free path, ballistic transport and symmetrical band structure, promise a new device application in the future. Improving the modeling of BLG Field Effect Transistor (FET) devices, based on the quant...

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Main Author:	Mousavi, Seyed Mahdi
Format:	Thesis
Language:	English
Published:	2012
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/36985/1/SeyedMahdiMousaviMFKE2012.pdf
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id	my-utm-ep.36985
record_format	uketd_dc
spelling	my-utm-ep.369852017-09-25T06:10:16Z Modeling and simulation of bilayer graphene nanoribbon field effect transistor 2012-10 Mousavi, Seyed Mahdi TK Electrical engineering. Electronics Nuclear engineering The unique structure and electronic properties of Bilayer Graphene Nanoribbon (BLG) such as long mean free path, ballistic transport and symmetrical band structure, promise a new device application in the future. Improving the modeling of BLG Field Effect Transistor (FET) devices, based on the quantum confinement effect, is the primary objective of this research. It presents an analytical and numerical model for evaluating electrical properties of BLG devices in equilibrium (temperature is constant) and non-equilibrium states (for different temperatures). By developing the carrier statistic and carrier transport model, the current-voltage model of a BLG FET is established and evaluated. Using an analytical model, BLG carrier concentration and conductance in degenerate and nondegenerate limits are explored. The carrier mobility and drain current (as a mean parameter of FET characteristic) are also being investigated. This research also presents a numerical implementation of the developed model. These models provide one with the chance to perform simulation in a reasonable amount of time, which is required for large-scale applications of device optimisations. MATLAB software is used in the numerical methods which have been extensively applied for the study of BLG FET behaviour. Comparison study of conductance, mobility and currentvoltage with published experimental data is presented and good agreements with the proposed models are reported. The presented model can be used in Technology Computer Aided Design tools to improve the performance of next generation nanodevices. 2012-10 Thesis http://eprints.utm.my/id/eprint/36985/ http://eprints.utm.my/id/eprint/36985/1/SeyedMahdiMousaviMFKE2012.pdf application/pdf en public masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Mousavi, Seyed Mahdi Modeling and simulation of bilayer graphene nanoribbon field effect transistor
description	The unique structure and electronic properties of Bilayer Graphene Nanoribbon (BLG) such as long mean free path, ballistic transport and symmetrical band structure, promise a new device application in the future. Improving the modeling of BLG Field Effect Transistor (FET) devices, based on the quantum confinement effect, is the primary objective of this research. It presents an analytical and numerical model for evaluating electrical properties of BLG devices in equilibrium (temperature is constant) and non-equilibrium states (for different temperatures). By developing the carrier statistic and carrier transport model, the current-voltage model of a BLG FET is established and evaluated. Using an analytical model, BLG carrier concentration and conductance in degenerate and nondegenerate limits are explored. The carrier mobility and drain current (as a mean parameter of FET characteristic) are also being investigated. This research also presents a numerical implementation of the developed model. These models provide one with the chance to perform simulation in a reasonable amount of time, which is required for large-scale applications of device optimisations. MATLAB software is used in the numerical methods which have been extensively applied for the study of BLG FET behaviour. Comparison study of conductance, mobility and currentvoltage with published experimental data is presented and good agreements with the proposed models are reported. The presented model can be used in Technology Computer Aided Design tools to improve the performance of next generation nanodevices.
format	Thesis
qualification_level	Master's degree
author	Mousavi, Seyed Mahdi
author_facet	Mousavi, Seyed Mahdi
author_sort	Mousavi, Seyed Mahdi
title	Modeling and simulation of bilayer graphene nanoribbon field effect transistor
title_short	Modeling and simulation of bilayer graphene nanoribbon field effect transistor
title_full	Modeling and simulation of bilayer graphene nanoribbon field effect transistor
title_fullStr	Modeling and simulation of bilayer graphene nanoribbon field effect transistor
title_full_unstemmed	Modeling and simulation of bilayer graphene nanoribbon field effect transistor
title_sort	modeling and simulation of bilayer graphene nanoribbon field effect transistor
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2012
url	http://eprints.utm.my/id/eprint/36985/1/SeyedMahdiMousaviMFKE2012.pdf
_version_	1747816487820722176

Modeling and simulation of bilayer graphene nanoribbon field effect transistor

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