Silicon nanowire field-effect transistor (SiNWFET) and its circuit level performance
Since the number of transistors on Integrated Circuit (IC) double every 18 months, the scaling of a device in nanometer is highly required. Due to the downscaling process, conventional Metal-Oxide-Semiconductor Field-Effect- Transistors (MOSFET) lead to the short-channel effects, gate-leakage curren...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/48023/25/SitiNorazlinBahadorMFKE2014.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|