Silicon nanowire field-effect transistor (SiNWFET) and its circuit level performance

Silicon nanowire field-effect transistor (SiNWFET) and its circuit level performance

Since the number of transistors on Integrated Circuit (IC) double every 18 months, the scaling of a device in nanometer is highly required. Due to the downscaling process, conventional Metal-Oxide-Semiconductor Field-Effect- Transistors (MOSFET) lead to the short-channel effects, gate-leakage curren...

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書目詳細資料
主要作者:	Bahador, Siti Norazlin
格式:	Thesis
語言:	English
出版:	2014
主題:	TK Electrical engineering Electronics Nuclear engineering
在線閱讀:	http://eprints.utm.my/id/eprint/48023/25/SitiNorazlinBahadorMFKE2014.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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