Silicon nanowire field-effect transistor (SiNWFET) and its circuit level performance
Since the number of transistors on Integrated Circuit (IC) double every 18 months, the scaling of a device in nanometer is highly required. Due to the downscaling process, conventional Metal-Oxide-Semiconductor Field-Effect- Transistors (MOSFET) lead to the short-channel effects, gate-leakage curren...
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2014
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| 主题: | |
| 在线阅读: | http://eprints.utm.my/id/eprint/48023/25/SitiNorazlinBahadorMFKE2014.pdf |
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