Nickel phosphorus coated substrate micro-defect reduction through chemical mechanical planarization process optimization

Chemical mechanical planarization (CMP) was known as a process to gain superfine surface finish with high precision mechanical parameters. It widely used within semiconductors wafer manufacturing and hard disk (HDD) industries. There’re very few research done in HDD compared with silicon wafer. Micr...

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Main Author: Mohd. Saleh, Nazim
Format: Thesis
Language:English
Published: 2014
Subjects:
Online Access:http://eprints.utm.my/id/eprint/50778/25/NazimMohdSalehMFKM2014.pdf
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spelling my-utm-ep.507782020-07-12T03:57:55Z Nickel phosphorus coated substrate micro-defect reduction through chemical mechanical planarization process optimization 2014-06 Mohd. Saleh, Nazim TJ Mechanical engineering and machinery Chemical mechanical planarization (CMP) was known as a process to gain superfine surface finish with high precision mechanical parameters. It widely used within semiconductors wafer manufacturing and hard disk (HDD) industries. There’re very few research done in HDD compared with silicon wafer. Micro defect formation caused by first step polishing in multistep polishing reducing the “good sector” and areal density in HDD substrate platter. In this study, micro defect reduction became the main objectives and as main response with others parameters including material removal rate and micro waviness. A 2 level 4 factor fractional factorial with center points Resolution IV, Design of Experiment (DOE) with total of 12 experimental runs was chosen for main effect and interaction screening purposes. All key factors such as platen rotation speed (rpm), applied pressure (g/cm2), slurry distribution points and slurry flow rate (ml/min) were then being optimized using Response Surface Method (RSM) setup of a set of full factorial 4 factors with center point, single replicate, 8 axial point and 2 alpha significance value with total 31 random runs. Results shows that all the input factors were affecting MRR and MD count except micro waviness which not respond to all input factors applied. Optimum input parameter setup were then established with setup of applied pressure (103.1 g/cm2), slurry distribution points (4/5 points), slurry flow rate (381.6 ml/min) and platen rotation speed (15.7 rpm). Predicted composite desirability gained to be 0.998, which can be satisfactory accepted. Verification runs from the parameter setup shows and concluded that the desired MD and MRR successfully achieved with 1.688% variation. 2014-06 Thesis http://eprints.utm.my/id/eprint/50778/ http://eprints.utm.my/id/eprint/50778/25/NazimMohdSalehMFKM2014.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:85653 masters Universiti Teknologi Malaysia, Faculty of Mechanical Engineering Faculty of Mechanical Engineering
institution Universiti Teknologi Malaysia
collection UTM Institutional Repository
language English
topic TJ Mechanical engineering and machinery
spellingShingle TJ Mechanical engineering and machinery
Mohd. Saleh, Nazim
Nickel phosphorus coated substrate micro-defect reduction through chemical mechanical planarization process optimization
description Chemical mechanical planarization (CMP) was known as a process to gain superfine surface finish with high precision mechanical parameters. It widely used within semiconductors wafer manufacturing and hard disk (HDD) industries. There’re very few research done in HDD compared with silicon wafer. Micro defect formation caused by first step polishing in multistep polishing reducing the “good sector” and areal density in HDD substrate platter. In this study, micro defect reduction became the main objectives and as main response with others parameters including material removal rate and micro waviness. A 2 level 4 factor fractional factorial with center points Resolution IV, Design of Experiment (DOE) with total of 12 experimental runs was chosen for main effect and interaction screening purposes. All key factors such as platen rotation speed (rpm), applied pressure (g/cm2), slurry distribution points and slurry flow rate (ml/min) were then being optimized using Response Surface Method (RSM) setup of a set of full factorial 4 factors with center point, single replicate, 8 axial point and 2 alpha significance value with total 31 random runs. Results shows that all the input factors were affecting MRR and MD count except micro waviness which not respond to all input factors applied. Optimum input parameter setup were then established with setup of applied pressure (103.1 g/cm2), slurry distribution points (4/5 points), slurry flow rate (381.6 ml/min) and platen rotation speed (15.7 rpm). Predicted composite desirability gained to be 0.998, which can be satisfactory accepted. Verification runs from the parameter setup shows and concluded that the desired MD and MRR successfully achieved with 1.688% variation.
format Thesis
qualification_level Master's degree
author Mohd. Saleh, Nazim
author_facet Mohd. Saleh, Nazim
author_sort Mohd. Saleh, Nazim
title Nickel phosphorus coated substrate micro-defect reduction through chemical mechanical planarization process optimization
title_short Nickel phosphorus coated substrate micro-defect reduction through chemical mechanical planarization process optimization
title_full Nickel phosphorus coated substrate micro-defect reduction through chemical mechanical planarization process optimization
title_fullStr Nickel phosphorus coated substrate micro-defect reduction through chemical mechanical planarization process optimization
title_full_unstemmed Nickel phosphorus coated substrate micro-defect reduction through chemical mechanical planarization process optimization
title_sort nickel phosphorus coated substrate micro-defect reduction through chemical mechanical planarization process optimization
granting_institution Universiti Teknologi Malaysia, Faculty of Mechanical Engineering
granting_department Faculty of Mechanical Engineering
publishDate 2014
url http://eprints.utm.my/id/eprint/50778/25/NazimMohdSalehMFKM2014.pdf
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