Failure of Ohm’s law and circuit design

Ohm's law is at the heart of circuit theory both for digital and analogue applications. Ohm's law depicts the linear current response I to the applied voltage V across a length of resistor. The resistance, as inverse slope of current-voltage (I-V)graph, is constant and is extensively used...

Full description

Saved in:

Bibliographic Details
Main Author:	Rahman, Mohammad Obaidur
Format:	Thesis
Language:	English
Published:	2015
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/53867/1/MohammadObaidurRahmanMFKE2015.pdf
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-utm-ep.53867
record_format	uketd_dc
spelling	my-utm-ep.538672020-09-13T09:16:24Z Failure of Ohm’s law and circuit design 2015-06 Rahman, Mohammad Obaidur TK Electrical engineering. Electronics Nuclear engineering Ohm's law is at the heart of circuit theory both for digital and analogue applications. Ohm's law depicts the linear current response I to the applied voltage V across a length of resistor. The resistance, as inverse slope of current-voltage (I-V)graph, is constant and is extensively used in the published literature. However, the linear response transforms to a sublinear response with current eventually saturating to a constant value I,m. Nonohmic behaviour is distinctly visible when applied voltage V is larger than the critical voltage v:e =V,L / e= (V> v,), V, is the thermal voltage with value 0.0259 V at room temperature and t ow(typically 100 urn) is the mean free path (mfp) in a nanoscale (L < 1000nm) device. The breakdown of Ohm's law affects heavily the flow of transporting carrier in a nanoscale device. The surge in direct resistance R~V/I and incremental FdV/dI changes the time constants, power consumption, voltage and current division laws. The transient RC switching delay in micro/nano-scale circuit is strongly affected by the surge in the resistance arising out of sub-linear current-voltage (I-V) characteristics. The goal is to investigate the circuit laws when Ohm's law is not applicable. Factors affecting the critical voltage beyond which Ohm's law fails in scaled-down nanostructures have been studied in this project.The theory to ID silicon nanowire, 2D AlGaAs nano-layer and 3D bulk resistor have been applied. The mechanism of current saturation is studied here. Numerical codes using MATLAB simulation software are developed. Each resistor in addition to its ohmic value R; must also be described by either the critical voltage V, or saturation current 1,01' connected by the relation v:e =I,olRo whose default value is assumed to be infinite when Ohm's law is applicable. The research framework is based on Non equilibriumArora's Distribution Function (NEADF). 2015-06 Thesis http://eprints.utm.my/id/eprint/53867/ http://eprints.utm.my/id/eprint/53867/1/MohammadObaidurRahmanMFKE2015.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:86639 masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Rahman, Mohammad Obaidur Failure of Ohm’s law and circuit design
description	Ohm's law is at the heart of circuit theory both for digital and analogue applications. Ohm's law depicts the linear current response I to the applied voltage V across a length of resistor. The resistance, as inverse slope of current-voltage (I-V)graph, is constant and is extensively used in the published literature. However, the linear response transforms to a sublinear response with current eventually saturating to a constant value I,m. Nonohmic behaviour is distinctly visible when applied voltage V is larger than the critical voltage v:e =V,L / e= (V> v,), V, is the thermal voltage with value 0.0259 V at room temperature and t ow(typically 100 urn) is the mean free path (mfp) in a nanoscale (L < 1000nm) device. The breakdown of Ohm's law affects heavily the flow of transporting carrier in a nanoscale device. The surge in direct resistance R~V/I and incremental FdV/dI changes the time constants, power consumption, voltage and current division laws. The transient RC switching delay in micro/nano-scale circuit is strongly affected by the surge in the resistance arising out of sub-linear current-voltage (I-V) characteristics. The goal is to investigate the circuit laws when Ohm's law is not applicable. Factors affecting the critical voltage beyond which Ohm's law fails in scaled-down nanostructures have been studied in this project.The theory to ID silicon nanowire, 2D AlGaAs nano-layer and 3D bulk resistor have been applied. The mechanism of current saturation is studied here. Numerical codes using MATLAB simulation software are developed. Each resistor in addition to its ohmic value R; must also be described by either the critical voltage V, or saturation current 1,01' connected by the relation v:e =I,olRo whose default value is assumed to be infinite when Ohm's law is applicable. The research framework is based on Non equilibriumArora's Distribution Function (NEADF).
format	Thesis
qualification_level	Master's degree
author	Rahman, Mohammad Obaidur
author_facet	Rahman, Mohammad Obaidur
author_sort	Rahman, Mohammad Obaidur
title	Failure of Ohm’s law and circuit design
title_short	Failure of Ohm’s law and circuit design
title_full	Failure of Ohm’s law and circuit design
title_fullStr	Failure of Ohm’s law and circuit design
title_full_unstemmed	Failure of Ohm’s law and circuit design
title_sort	failure of ohm’s law and circuit design
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2015
url	http://eprints.utm.my/id/eprint/53867/1/MohammadObaidurRahmanMFKE2015.pdf
_version_	1747817645649952768

Failure of Ohm’s law and circuit design

Similar Items