Modeling and analysis of ballistic carbon nanotube field effect transistor (CNTFET) with quantum transport concept

Aggressive scaling of CMOS has led to higher and higher integration density, the higher performance of devices, low power consumption and more complex function. However, it will eventually reach its limit in future. As device sizes approach the nanoscale, new opportunities arise from harnessing the...

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Main Author:	Heng, Chin Chuan
Format:	Thesis
Language:	English
Published:	2007
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/6103/1/HengChinChuanMFKE2007.pdf
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id	my-utm-ep.6103
record_format	uketd_dc
spelling	my-utm-ep.61032018-08-26T04:43:12Z Modeling and analysis of ballistic carbon nanotube field effect transistor (CNTFET) with quantum transport concept 2007-05 Heng, Chin Chuan TK Electrical engineering. Electronics Nuclear engineering Aggressive scaling of CMOS has led to higher and higher integration density, the higher performance of devices, low power consumption and more complex function. However, it will eventually reach its limit in future. As device sizes approach the nanoscale, new opportunities arise from harnessing the physical and chemical properties at the nanoscale. Carbon Nanotubes are considered as the most promising carbon nanostructure material is realizing the nanoelectronic transistors back in year 1991. The objective of this project is to create a modeling of next generation field effect transistors (CNTFET) to model the characteristics of the devices. Modeling of semiconductor devices is critical in understanding factors which may affect their performance. This allows greater understanding of the underlying physics and aids optimization in both materials and lowers development costs by reducing the time and effect between design and fabrication of working prototypes. The overall project is uses the concept of a Carbon Nanotube technology along with its application in Carbon Nanotube field effect transistors, physic of Carbon Nanotube, and quantum transport theory to create an equivalent universal SPICE model. Numerical simulation studies are carried out by using MATLAB program to understand the device physic and the performances of transistor are compared with conventional MOSFET. Further analysis has been made on changing some transistor parameter (for example the oxide thickness, carbon nanotube diameter and etc) to further understand what controls and how to improve the transistor performance. 2007-05 Thesis http://eprints.utm.my/id/eprint/6103/ http://eprints.utm.my/id/eprint/6103/1/HengChinChuanMFKE2007.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:62031 masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Heng, Chin Chuan Modeling and analysis of ballistic carbon nanotube field effect transistor (CNTFET) with quantum transport concept
description	Aggressive scaling of CMOS has led to higher and higher integration density, the higher performance of devices, low power consumption and more complex function. However, it will eventually reach its limit in future. As device sizes approach the nanoscale, new opportunities arise from harnessing the physical and chemical properties at the nanoscale. Carbon Nanotubes are considered as the most promising carbon nanostructure material is realizing the nanoelectronic transistors back in year 1991. The objective of this project is to create a modeling of next generation field effect transistors (CNTFET) to model the characteristics of the devices. Modeling of semiconductor devices is critical in understanding factors which may affect their performance. This allows greater understanding of the underlying physics and aids optimization in both materials and lowers development costs by reducing the time and effect between design and fabrication of working prototypes. The overall project is uses the concept of a Carbon Nanotube technology along with its application in Carbon Nanotube field effect transistors, physic of Carbon Nanotube, and quantum transport theory to create an equivalent universal SPICE model. Numerical simulation studies are carried out by using MATLAB program to understand the device physic and the performances of transistor are compared with conventional MOSFET. Further analysis has been made on changing some transistor parameter (for example the oxide thickness, carbon nanotube diameter and etc) to further understand what controls and how to improve the transistor performance.
format	Thesis
qualification_level	Master's degree
author	Heng, Chin Chuan
author_facet	Heng, Chin Chuan
author_sort	Heng, Chin Chuan
title	Modeling and analysis of ballistic carbon nanotube field effect transistor (CNTFET) with quantum transport concept
title_short	Modeling and analysis of ballistic carbon nanotube field effect transistor (CNTFET) with quantum transport concept
title_full	Modeling and analysis of ballistic carbon nanotube field effect transistor (CNTFET) with quantum transport concept
title_fullStr	Modeling and analysis of ballistic carbon nanotube field effect transistor (CNTFET) with quantum transport concept
title_full_unstemmed	Modeling and analysis of ballistic carbon nanotube field effect transistor (CNTFET) with quantum transport concept
title_sort	modeling and analysis of ballistic carbon nanotube field effect transistor (cntfet) with quantum transport concept
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2007
url	http://eprints.utm.my/id/eprint/6103/1/HengChinChuanMFKE2007.pdf
_version_	1747814626930720768

Modeling and analysis of ballistic carbon nanotube field effect transistor (CNTFET) with quantum transport concept

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