Simulation of single electron transistor (SET) circuits using Monte Carlo method

The very fast switching characteristics and very low power consumption have given the single electron transistor (SET) promising capabilities to replace CMOS transistors in some semiconductor applications. SET theory of operation is now well established nevertheless the transistor is still under lab...

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Main Author:	Ahmad, Syabani
Format:	Thesis
Language:	English
Published:	2007
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/6425/1/SyabaniAhmadMFKE2007.pdf
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id	my-utm-ep.6425
record_format	uketd_dc
spelling	my-utm-ep.64252018-08-26T04:49:38Z Simulation of single electron transistor (SET) circuits using Monte Carlo method 2007-06 Ahmad, Syabani TK Electrical engineering. Electronics Nuclear engineering The very fast switching characteristics and very low power consumption have given the single electron transistor (SET) promising capabilities to replace CMOS transistors in some semiconductor applications. SET theory of operation is now well established nevertheless the transistor is still under laboratory investigations in the fields of fabrication and applications in Large Scale Integration (LSI). Simulation of SET consumes a great deal of computer time, which arises a need to renovate fast and accurate simulation algorithms. This paper presents a simple model for SET circuits, based on the orthodox theory, which calculates carrier transfer rates from source to drain of the transistor by utilizing statistical mechanics. The simulator that is used for this project is MOSES version 1.2 (Monte Carlo Single Electron Transistor Simulator) which has been developed by Ruby Chen in Year 1997. The reason for choosing this program is because it is free and sufficient to simulate SET circuits such as Array, Junction and SET. 2007-06 Thesis http://eprints.utm.my/id/eprint/6425/ http://eprints.utm.my/id/eprint/6425/1/SyabaniAhmadMFKE2007.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:62277 masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Ahmad, Syabani Simulation of single electron transistor (SET) circuits using Monte Carlo method
description	The very fast switching characteristics and very low power consumption have given the single electron transistor (SET) promising capabilities to replace CMOS transistors in some semiconductor applications. SET theory of operation is now well established nevertheless the transistor is still under laboratory investigations in the fields of fabrication and applications in Large Scale Integration (LSI). Simulation of SET consumes a great deal of computer time, which arises a need to renovate fast and accurate simulation algorithms. This paper presents a simple model for SET circuits, based on the orthodox theory, which calculates carrier transfer rates from source to drain of the transistor by utilizing statistical mechanics. The simulator that is used for this project is MOSES version 1.2 (Monte Carlo Single Electron Transistor Simulator) which has been developed by Ruby Chen in Year 1997. The reason for choosing this program is because it is free and sufficient to simulate SET circuits such as Array, Junction and SET.
format	Thesis
qualification_level	Master's degree
author	Ahmad, Syabani
author_facet	Ahmad, Syabani
author_sort	Ahmad, Syabani
title	Simulation of single electron transistor (SET) circuits using Monte Carlo method
title_short	Simulation of single electron transistor (SET) circuits using Monte Carlo method
title_full	Simulation of single electron transistor (SET) circuits using Monte Carlo method
title_fullStr	Simulation of single electron transistor (SET) circuits using Monte Carlo method
title_full_unstemmed	Simulation of single electron transistor (SET) circuits using Monte Carlo method
title_sort	simulation of single electron transistor (set) circuits using monte carlo method
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2007
url	http://eprints.utm.my/id/eprint/6425/1/SyabaniAhmadMFKE2007.pdf
_version_	1747814656952500224

Simulation of single electron transistor (SET) circuits using Monte Carlo method

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