Simulation of single electron transistor (SET) circuits using Monte Carlo method

Simulation of single electron transistor (SET) circuits using Monte Carlo method

The very fast switching characteristics and very low power consumption have given the single electron transistor (SET) promising capabilities to replace CMOS transistors in some semiconductor applications. SET theory of operation is now well established nevertheless the transistor is still under lab...

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书目详细资料
主要作者:	Ahmad, Syabani
格式:	Thesis
语言:	English
出版:	2007
主题:	TK Electrical engineering Electronics Nuclear engineering
在线阅读:	http://eprints.utm.my/id/eprint/6425/1/SyabaniAhmadMFKE2007.pdf
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