Simulation of single electron transistor (SET) circuits using Monte Carlo method
The very fast switching characteristics and very low power consumption have given the single electron transistor (SET) promising capabilities to replace CMOS transistors in some semiconductor applications. SET theory of operation is now well established nevertheless the transistor is still under lab...
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主要作者: | |
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格式: | Thesis |
语言: | English |
出版: |
2007
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在线阅读: | http://eprints.utm.my/id/eprint/6425/1/SyabaniAhmadMFKE2007.pdf |
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