Modeling and simulation of strained graprene nanoribbon field effect transistor

Modeling and simulation of strained graprene nanoribbon field effect transistor

Stretching technique used in material fundamental is not a new technology. It has been adopted in silicon industry to overcome the limitations arisen by scaling down the size of the conventional metal oxide semiconductor Field Effect Transistor (FET). This technique is known as strain technology. As...

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書目詳細資料
主要作者:	Cre Rosid, Nurul Aida Izuani
格式:	Thesis
語言:	English
出版:	2016
主題:	TK Electrical engineering Electronics Nuclear engineering
在線閱讀:	http://eprints.utm.my/id/eprint/77839/1/NurulAidaIzuaniMFKE2016.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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