Modeling and simulation of strained graprene nanoribbon field effect transistor

Modeling and simulation of strained graprene nanoribbon field effect transistor

Stretching technique used in material fundamental is not a new technology. It has been adopted in silicon industry to overcome the limitations arisen by scaling down the size of the conventional metal oxide semiconductor Field Effect Transistor (FET). This technique is known as strain technology. As...

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书目详细资料
主要作者:	Cre Rosid, Nurul Aida Izuani
格式:	Thesis
语言:	English
出版:	2016
主题:	TK Electrical engineering Electronics Nuclear engineering
在线阅读:	http://eprints.utm.my/id/eprint/77839/1/NurulAidaIzuaniMFKE2016.pdf
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