Modeling and simulation of strained graprene nanoribbon field effect transistor
Stretching technique used in material fundamental is not a new technology. It has been adopted in silicon industry to overcome the limitations arisen by scaling down the size of the conventional metal oxide semiconductor Field Effect Transistor (FET). This technique is known as strain technology. As...
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| 格式: | Thesis |
| 语言: | English |
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2016
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| 在线阅读: | http://eprints.utm.my/id/eprint/77839/1/NurulAidaIzuaniMFKE2016.pdf |
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