Optimization of progress parameters for lower leakage current in 10 NM finfet using taguchi method
The scaling of conventional transistor according to Moore’s Law is predicted to reach its limitation in the future. The conventional transistor using silicon material particularly at nanoscale channel has experienced the short channel effect (SCE), which leads to increase in the leakage current. The...
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| 主要作者: | |
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| 格式: | Thesis |
| 語言: | English |
| 出版: |
2020
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| 主題: | |
| 在線閱讀: | http://eprints.utm.my/id/eprint/93027/1/LoyYingTingMSKE2020.pdf |
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