Optimization of progress parameters for lower leakage current in 10 NM finfet using taguchi method

Optimization of progress parameters for lower leakage current in 10 NM finfet using taguchi method

The scaling of conventional transistor according to Moore’s Law is predicted to reach its limitation in the future. The conventional transistor using silicon material particularly at nanoscale channel has experienced the short channel effect (SCE), which leads to increase in the leakage current. The...

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書目詳細資料
主要作者:	Loy, Ying Ting
格式:	Thesis
語言:	English
出版:	2020
主題:	TK Electrical engineering Electronics Nuclear engineering
在線閱讀:	http://eprints.utm.my/id/eprint/93027/1/LoyYingTingMSKE2020.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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