The development and implementation of computer-based measurement system for energy band gap of semiconductor diode
This study is conducted to develop computer-based measurement system to obtain energy band gap of semiconductor diode. The forward voltage technique is a common technique used to determine energy band gap of diode driven by constant current source. The system is developed to adapt and implement an e...
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2019
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Universiti Pendidikan Sultan Idris |
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Nor Shaida Mohd Saufi The development and implementation of computer-based measurement system for energy band gap of semiconductor diode |
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This study is conducted to develop computer-based measurement system to obtain energy band gap of semiconductor diode. The forward voltage technique is a common technique used to determine energy band gap of diode driven by constant current source. The system is developed to adapt and implement an equation of energy band gap deduced from previous research using computer-based measurement in order to produce more accurate and reliable result of energy band gap. The system is consisted of personal computer, interface board, sensors and circuit. The graphical user interface (GUI) of the system is developed using LabVIEW from National Instruments. The developed system is tested on silicon and germanium diode and four types light-emitting diode (LED) which are red, orange, blue and green. Their temperature-forward voltage characteristics (T versus VF) under 12mA constant current source are measured to calculate energy band gap and wavelength of emitted photon. Measurement was carried from 5C to 95C with temperature intervals of 5C. Result shows that the system successfully measured energy band gap of all tested diode. The band gaps of silicon diode 1N4007 and germanium diode 1N34 were determined to be 1.99 0.05 eV and 0.88 0.03 eV respectively. The band gaps of orange, red, blue and green LEDs were obtained to be 1.82 0.03 eV, 1.98 0.02 eV, 3.90 0.03 eV and 2.58 0.05 eV. This study implies that this computer-based measurement system has improved and simplifies the experiment set-up and process to obtain the energy band gap as reported in previous studies. |
format |
thesis |
qualification_name |
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qualification_level |
Master's degree |
author |
Nor Shaida Mohd Saufi |
author_facet |
Nor Shaida Mohd Saufi |
author_sort |
Nor Shaida Mohd Saufi |
title |
The development and implementation of computer-based measurement system for energy band gap of semiconductor diode |
title_short |
The development and implementation of computer-based measurement system for energy band gap of semiconductor diode |
title_full |
The development and implementation of computer-based measurement system for energy band gap of semiconductor diode |
title_fullStr |
The development and implementation of computer-based measurement system for energy band gap of semiconductor diode |
title_full_unstemmed |
The development and implementation of computer-based measurement system for energy band gap of semiconductor diode |
title_sort |
development and implementation of computer-based measurement system for energy band gap of semiconductor diode |
granting_institution |
Universiti Pendidikan Sultan Idris |
granting_department |
Fakulti Sains dan Matematik |
publishDate |
2019 |
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https://ir.upsi.edu.my/detailsg.php?det=6640 |
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oai:ir.upsi.edu.my:66402022-01-31 The development and implementation of computer-based measurement system for energy band gap of semiconductor diode 2019 Nor Shaida Mohd Saufi This study is conducted to develop computer-based measurement system to obtain energy band gap of semiconductor diode. The forward voltage technique is a common technique used to determine energy band gap of diode driven by constant current source. The system is developed to adapt and implement an equation of energy band gap deduced from previous research using computer-based measurement in order to produce more accurate and reliable result of energy band gap. The system is consisted of personal computer, interface board, sensors and circuit. The graphical user interface (GUI) of the system is developed using LabVIEW from National Instruments. The developed system is tested on silicon and germanium diode and four types light-emitting diode (LED) which are red, orange, blue and green. Their temperature-forward voltage characteristics (T versus VF) under 12mA constant current source are measured to calculate energy band gap and wavelength of emitted photon. Measurement was carried from 5C to 95C with temperature intervals of 5C. Result shows that the system successfully measured energy band gap of all tested diode. The band gaps of silicon diode 1N4007 and germanium diode 1N34 were determined to be 1.99 0.05 eV and 0.88 0.03 eV respectively. The band gaps of orange, red, blue and green LEDs were obtained to be 1.82 0.03 eV, 1.98 0.02 eV, 3.90 0.03 eV and 2.58 0.05 eV. This study implies that this computer-based measurement system has improved and simplifies the experiment set-up and process to obtain the energy band gap as reported in previous studies. 2019 thesis https://ir.upsi.edu.my/detailsg.php?det=6640 https://ir.upsi.edu.my/detailsg.php?det=6640 text eng closedAccess Masters Universiti Pendidikan Sultan Idris Fakulti Sains dan Matematik Carolina Sparavigna, A. (2014). Light-Emitting Diodes in the Solid-State LightingSystems. International Journal Of Sciences, 0(11), 9-17. doi:10.18483/ijsci.593Davis, N. (2017). What you need to know before your next LED design. Retrieved January 7, 2019, from https://www.powerelectronicsnews.com/problems-solutions/what-you-need-to-know-before-your-next-led-designDharma, J., Pisal, A., & Shelton, C. T. (2009). Simple method of measuring the energyband gap value of TiO2 in the powder form using a UV/Vis/NIR spectrometer. ApplicationNote.Garg, A. & Dhingra, V. (2010). Automating Energy Bandgap Measurements in Semiconductors Using LabVIEW. European Journal of Physics Education, 1(1), 2-14.Haruyama, T., & McDonald, P. C. (1992). Evaluation of simple constant current sources for silicon diode thermometers. Measurement Science and Technology, 3(8), 713.Jiles, D. (2012). Introduction to the electronic properties of materials. Niederlande: SpringerScience Business Media B.V.Kanchi, R. R., & Uttarkar, N. K. (2018). Design and development of a semiconductor bandgapmeasurement system using Microcontroller: MSP430G2553 and ZigBee: CC2500. Materials Today:Proceedings, 5(1), 351-359.Khan, A. (2005). Introduction to electrical, electronics and communicationengineering. Firewall MediaKumar, B., & Jain, S. B. (2014). Electronic devices and circuits. Delhi: PHI LearningPrivate Limited.LED PANEL LIGHT LEDS and Determining Planck is Constant fromhttp://www.lumin-lighting.com/news/LED-PANEL-LIGHT-LEDS-and- Determining-Planck-is-Constant.htmLow, J. J., Kreider, M. L., Pulsifer, D. P., Jones, A. S., & Gilani, T. H. (2008). Energyband gap in silicon. Am. J. Undergrad. Res., 7(1), 27-32.Mukaro, R., Taele, B. M., & Tinarwo, D. (2006). In situ measurement of the energygap of a semiconductor using a microcontroller-based system. European journal of physics,27(3), 531.Naidu, S. M. (2010). A text book of applied physics. Chennai: Pearson.National Instruments. (2009). Overview of Curve Fitting Models and Methods in LabVIEW [White Papers]. Retrieved August 12, 2018, fromhttp://www.ni.com/white-paper/6954/en/National Instruments. (2017). LabVIEW for Measurement and Data Analysis. [White Papers]. Retrieved August 13, 2018, from http://www.ni.com/white- paper/3566/en/.Ocaya, R. O., & Luhanga, P. V. C. (2011). A fresh look at the semiconductor bandgap using constantcurrent data. European Journal of Physics, 32(5), 1155.Precker, J. W. (2007). Simple experimental verification of the relation between theband-gap energy and the energy of photons emitted by LEDs. European journal of physics,28(3), 493.Phidgets. (2016). CE-IZ02-32MS2-0.5 DC Current Sensor 0-1A. Retrieved January 6, 2019, fromhttp://socialmediatoday.comhttps://www.phidgets.com/?tier=3&catid=16&pci d=14&prodid=387Precker, J. W., & da Silva, M. A. (2002). Experimental estimation of the band gap in silicon andgermanium from the temperaturevoltage curve of diode thermometers. American Journalof Physics, 70(11), 1150-1153.Triyana, K., Ramadhan, S., & Barata, A. M. I. (2014). Determination of Energy band gap of Semiconductor in Homojunction Structure Devices by Using Customized MicrocontrollerBased Apparatus. Advanced Materials Research, (896).Wagner, E. P. (2016). Investigating Bandgap Energies, Materials, and Design ofLight-Emitting Diodes. Journal of Chemical Education, 93(7), 1289-1298.Travis, J., Kring, Jim.(2006). Introduction to Graphical Programming With LabVIEW.Retrieved June 16, 2018, fromhttp://www.informit.com/articles/article.aspx?p=662895&seqNum=3Schubert, E. F. (2018). Light-emitting diodes. E. Fred Schubert.Schuetze, A. P., Lewis, W., Brown, C., & Gertz, W. J. (2004). A laboratory on thefour-point probe techniques. American Journal of Physics. 72(2), 149-153.Salivahanan, S. (2011). Electronic devices and circuits. Tata McGraw-Hill Education.Sailaja, D., & Reddy, K. C. MEASUREMENT OF ENERGY GAP BY THE FOUR PROBE METHOD.Sze, S. M., & Ng, K. K. (2006). Physics of semiconductor devices.Vijaya, M. S., & Rangarajan, G. (2003). Materials science. Tata Mcgraw-Hill. |