Characterizing the channel interface properties of vertical double-diffused metal-oxide semiconductor (DMOS) with charge pumping method /
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Format: | Thesis Book |
Language: | English |
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LEADER | 01481cam a2200337 i 4500 | ||
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001 | u1003442 | ||
003 | SIRSI | ||
005 | 201409181005 | ||
008 | 140918s2014 my a t 000 0 eng m | ||
040 | |a UMM |d UMJ |e rda | ||
090 | |a TK7 |b UM 2014 Mohhk | ||
097 | |a TK7 |b UM 2014 Mohhk | ||
100 | 0 | |a Mohd Hanif Kamaruddin, |e author | |
245 | 1 | 0 | |a Characterizing the channel interface properties of vertical double-diffused metal-oxide semiconductor (DMOS) with charge pumping method / |c Mohd Hanif bin Kamaruddin. |
264 | 1 | |c 2014 | |
264 | 4 | |c 2014 | |
300 | |a xx, 131 leaves : |b illustrations ; |c 30cm. | ||
336 | |a text |2 rdacontent | ||
337 | |a unmediated |2 rdamedia | ||
338 | |a volume |2 rdacarrier | ||
502 | |b M.Eng.Sc. |c Jabatan Kejuruteraan Elektrik, Fakulti Kejuruteraan, Universiti Malaya |d 2014. | ||
504 | |a Bibliography: leaves 116-122. | ||
650 | 0 | |a Silicon oxide. | |
650 | 0 | |a Metal oxide semiconductors |x Materials. | |
650 | 0 | |a Integrated circuits |x Design. | |
710 | 2 | |a Universiti Malaya. |b Jabatan Kejuruteraan Elektrik, |e degree granting institution. | |
900 | |a HA-ZA-AMA | ||
596 | |a 1 7 | ||
999 | |a TK7 UM 2014 MOHHK |w LC |c 1 |i A515975489 |d 25/8/2015 |f 25/8/2015 |g 1 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 24/8/2015 | ||
999 | |a TK7 UM 2014 MOHHK |w LC |c 1 |i A516364055 |d 29/1/2016 |f 29/1/2016 |g 1 |l STACKS |m P07JURUTER |r N |s Y |t TESIS |u 29/1/2016 |1 STEM | ||
999 | |a TK7 UM 2014 MOHHK |w LC |c 2 |i A516354755 |d 29/1/2016 |f 29/1/2016 |g 1 |l COUNTER |m P07JURUTER |r N |s Y |t CD |u 29/1/2016 |1 STEM |