Negative bias temperature instability and permittivity dependent delay mitigation in High-K metal oxide compatible cmos dielectric /

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Bibliographic Details
Main Author: Karim, Nissar Mohammad (Author)
Format: Thesis Book
Language:English
Published: 2015.
Subjects:
Online Access:http://studentsrepo.um.edu.my/id/eprint/7563
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LEADER 01508cam a2200349 i 4500
001 u1012432
003 SIRSI
005 201504021025
008 150402s2015 my a m 000 0 eng
040 |a UMM  |d UMJ  |e rda. 
090 |a TK7  |b UMP 2015 Kar 
097 |a TK7  |b UMP 2015 Kar 
100 1 |a Karim, Nissar Mohammad,  |e author. 
245 1 0 |a Negative bias temperature instability and permittivity dependent delay mitigation in High-K metal oxide compatible cmos dielectric /  |c Nissar Mohammad Karim. 
264 1 |c 2015. 
264 4 |c  2015. 
300 |a xix, 168 leaves :  |b illustrations ;  |c 30 cm. 
336 |a text  |2 rdacontent 
337 |a unmediated  |2 rdamedia 
338 |a volume  |2 rdacarrier 
502 |b Ph.D.  |c Jabatan Kejuruteraan Elektrik, Fakulti Kejuruteraan, Universiti Malaya  |d 2015. 
530 |a Also issued in CD. 
504 |a Bibliography: leaves 137-152. 
650 0 |a Metal oxide semiconductors, Complementary. 
690 |a Metallic oxide. 
710 2 |a Universiti Malaya.  |b Jabatan Kejuruteraan Elektrik,  |e degree granting instituitions. 
856 4 1 |u http://studentsrepo.um.edu.my/id/eprint/7563 
900 |a AMA NSR 
596 |a 1 7 25 
999 |a TK7 UMP 2015 KAR  |w LC  |c 1  |i A516164601  |d 15/2/2016  |f 15/2/2016  |g 1  |l STACKS  |m P07JURUTER  |r N  |s Y  |t TESIS  |u 15/2/2016  |1 STEM 
999 |a TK7 UMP 2015 KAR  |w LC  |c 1  |i A516122527  |d 20/9/2016  |f 20/9/2016  |g 1  |l STACKS  |m P01UTAMA  |r Y  |s Y  |t TESIS  |u 20/9/2016  |1 STEM 
999 |a TK7 UMP 2015 KAR  |w LC  |c 1  |i A516566494  |l STACKS  |m P25UMARCHI  |r Y  |s Y  |t CD  |u 4/12/2017  |1 STEM