Simulation framework of NBTI degradation in nano-scale p-mosfets from the perspective of hydrogen and non-hydrogen transport formalism /

Simulation framework of NBTI degradation in nano-scale p-mosfets from the perspective of hydrogen and non-hydrogen transport formalism /

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Bibliographic Details
Main Author: Hanim Hussin (Author)
Format: Thesis Book
Language:English
Published: 2015.
Subjects:
Microelectronics > Materials > Testing.
Metal oxide semiconductor field-effect transistors > Testing.
Integrated circuits > Defects.
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Description
Physical Description:xxiii, 236 leaves : illustrations ; 30 cm.
Issued also in CD.
Bibliography:Bibliography: leaves 222-233.

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