Simulation framework of NBTI degradation in nano-scale p-mosfets from the perspective of hydrogen and non-hydrogen transport formalism /
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
2015.
|
| Subjects: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| LEADER | 01493cam a2200337 i 4500 | ||
|---|---|---|---|
| 001 | u1021253 | ||
| 003 | SIRSI | ||
| 005 | 201509111731 | ||
| 008 | 150911s2015 my a m 000 0 eng | ||
| 040 | |a UMM |d AUM |e rda | ||
| 090 | |a TK7 |b UMP 2015 Hanh | ||
| 100 | 0 | |a Hanim Hussin, |e author. | |
| 245 | 1 | 0 | |a Simulation framework of NBTI degradation in nano-scale p-mosfets from the perspective of hydrogen and non-hydrogen transport formalism / |c Hanim Hussin. |
| 264 | 1 | |c 2015. | |
| 264 | 4 | |c 2015. | |
| 300 | |a xxiii, 236 leaves : |b illustrations ; |c 30 cm. | ||
| 336 | |a text |2 rdacontent | ||
| 337 | |a unmediated |2 rdamedia | ||
| 338 | |a volume |2 rdacarrier | ||
| 502 | |b Ph.D |c Jabatan Kejuruteraan Elektrik, Fakulti Kejuruteraan, Universiti Malaya |d 2015. | ||
| 504 | |a Bibliography: leaves 222-233. | ||
| 530 | |a Issued also in CD. | ||
| 650 | 0 | |a Microelectronics |x Materials |x Testing. | |
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors |x Testing. | |
| 650 | 0 | |a Integrated circuits |x Defects. | |
| 710 | 2 | |a Universiti Malaya. |b Jabatan Kejuruteraan Elektrik, |e degree granting institution. | |
| 900 | |a NSR NSM | ||
| 596 | |a 1 7 25 | ||
| 999 | |a TK7 UMP 2015 HANH |w LC |c 1 |i A516209489 |d 28/5/2017 |e 28/5/2017 |l STACKS |m P01UTAMA |n 1 |r Y |s Y |t TESIS |u 19/9/2016 | ||
| 999 | |a TK7 UMP 2015 HANH |w LC |c 1 |i A516238247 |d 30/9/2016 |f 30/9/2016 |g 1 |l STACKS |m P07JURUTER |r N |s Y |t TESIS |u 30/9/2016 |1 STEM | ||
| 999 | |a TK7 UMP 2015 HANH |w LC |c 1 |i A517060510 |f 9/9/2020 |g 1 |l STACKS |m P25UMARCHI |r N |s Y |t CD |u 26/7/2018 |1 STEM | ||