Defectivity improvement in advanced processes and its investigation to negative bias temperature instabilities in High-K/Metal-Gate Deep-Submicron CMOS /
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة كتاب |
| اللغة: | English |
| منشور في: |
2015
|
| الموضوعات: | |
| الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|
| LEADER | 01626cam a2200361 i 4500 | ||
|---|---|---|---|
| 001 | u1021261 | ||
| 003 | SIRSI | ||
| 005 | 201509140928 | ||
| 008 | 150914s2015 my t 000 0 eng m | ||
| 040 | |a UMM |d UMJ |e rda | ||
| 090 | |a TK7 |b UMP 2015 Yasaw | ||
| 097 | |a TK7 |b UMP 2015 Yasaw | ||
| 100 | 0 | |a Yasmin Abdul Wahab, |e author. | |
| 245 | 1 | 0 | |a Defectivity improvement in advanced processes and its investigation to negative bias temperature instabilities in High-K/Metal-Gate Deep-Submicron CMOS / |c Yasmin Abdul Wahab. |
| 264 | 1 | |c 2015 | |
| 264 | 4 | |c 2015 | |
| 300 | |a 200 leaves : |b illustrations ; |c 30 cm. | ||
| 336 | |a text |2 rdacontent | ||
| 337 | |a unmediated |2 rdamedia | ||
| 338 | |a volume |2 rdacarrier | ||
| 502 | |b Ph.D |c Jabatan Kejuruteraan Elektrik, Fakulti Kejuruteraan, Universiti Malaya |d 2015. | ||
| 504 | |a Bibliography: leaves 178-196. | ||
| 530 | |a Also issued in CD. | ||
| 650 | 0 | |a Metal oxide semiconductors, Complementary |x Testing | |
| 650 | 0 | |a Electroplating chemicals. | |
| 650 | 0 | |a Integrated circuits |x Very large scale integration. | |
| 650 | 0 | |a Very high speed integrated circuits | |
| 710 | 2 | |a Universiti Malaya. |b Jabatan Kejuruteraan Elektrik, |e degree granting institution. | |
| 900 | |a ZA | ||
| 596 | |a 1 25 | ||
| 999 | |a TK7 UMP 2015 YASAW |w LC |c 1 |i A516230291 |d 30/9/2015 |f 30/9/2015 |g 1 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 30/9/2015 |1 STEM |o .STAFF. | ||
| 999 | |a TK7 UMP 2015 YASAW |w LC |c 2 |i A516237618 |d 18/9/2018 |f 18/9/2018 |g 1 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 18/9/2018 |1 AHSS | ||
| 999 | |a TK7 UMP 2015 YASAW |w LC |c 1 |i A517068907 |d 30/10/2018 |f 30/10/2018 |g 1 |l STACKS |m P25UMARCHI |r Y |s Y |t CD |u 30/10/2018 |1 STEM | ||