Lei, Z. C. (2019). Formation of ZrO2 gate dielectric on Ge substrate by thermal oxidation and post annealing for metal-oxide-semiconductor devices.
Chicago Style (17th ed.) CitationLei, Zhen Ce. Formation of ZrO2 Gate Dielectric on Ge Substrate by Thermal Oxidation and Post Annealing for Metal-oxide-semiconductor Devices. 2019.
MLA (8th ed.) CitationLei, Zhen Ce. Formation of ZrO2 Gate Dielectric on Ge Substrate by Thermal Oxidation and Post Annealing for Metal-oxide-semiconductor Devices. 2019.
Warning: These citations may not always be 100% accurate.