APA引文

Lei, Z. C. (2019). Formation of ZrO2 gate dielectric on Ge substrate by thermal oxidation and post annealing for metal-oxide-semiconductor devices.

Chicago Style (17th ed.) Citation

Lei, Zhen Ce. Formation of ZrO2 Gate Dielectric on Ge Substrate by Thermal Oxidation and Post Annealing for Metal-oxide-semiconductor Devices. 2019.

MLA引文

Lei, Zhen Ce. Formation of ZrO2 Gate Dielectric on Ge Substrate by Thermal Oxidation and Post Annealing for Metal-oxide-semiconductor Devices. 2019.

警告:这些引文格式不一定是100%准确.