Crystal quality enhancement of semi-polar (11-22) InGaN/GaN-based LED grown on m-plane sapphire substrate via MOCVD /
Saved in:
Main Author: | Fadhil, Omar Ayad (Author) |
---|---|
Format: | Thesis Book |
Language: | English |
Published: |
2019.
|
Subjects: | |
Online Access: | http://studentsrepo.um.edu.my/11628/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD /
by: Mohd Afiq Anuar
Published: (2020) -
Growth of non-polar (11-20) A-plane GaN based leds grown on (1-120) R-plane sapphire substrate via MOCVD /
by: Anas Kamarundzaman
Published: (2022) -
Growth of GaN-based LED on c-plane GaN substrate /
by: Sivanathan Pariasamy
Published: (2018) -
Optimization of AIN/GaN strained-layer superlattice for GaN Epitaxy on Si(111) substrate /
by: Yusnizam Yusuf
Published: (2017) -
Electrical and optical characterization of commercial GaN and InGaN LED subjected to electron radiation /
by: Anati Syahirah binti Hedzir
Published: (2017)