Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD /
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| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
2020.
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| Subjects: | |
| Online Access: | http://studentsrepo.um.edu.my/12183/ |
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| LEADER | 01426nam a2200385 i 4500 | ||
|---|---|---|---|
| 001 | u1139868 | ||
| 003 | SIRSI | ||
| 005 | 202012071250 | ||
| 008 | 201207s2020 my a m 000 0 eng u | ||
| 040 | |a UMM |d AUM |e rda | ||
| 090 | |a QC3 |b UM 2020 Mohaa | ||
| 100 | 0 | |a Mohd Afiq Anuar, |e author. | |
| 245 | 1 | 0 | |a Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD / |c Mohd Afiq bin Anuar. |
| 264 | 1 | |c 2020. | |
| 300 | |a xv, 68 leaves : |b illustrations (some colour) ; |c 30 cm | ||
| 336 | |a text |2 rdacontent | ||
| 337 | |a unmediated |2 rdamedia | ||
| 337 | |a computer |2 rdamedia | ||
| 338 | |a volume |2 rdacarrier | ||
| 338 | |a computer disc |2 rdacarrier | ||
| 502 | |b M.Sc. |c Jabatan Fizik, Fakulti Sains, Universiti Malaya |d 2020. | ||
| 504 | |a Biblography: leaves 64-67. | ||
| 530 | |a Also issued in CD. | ||
| 650 | 0 | |a Gallium nitride. | |
| 650 | 0 | |a Epitaxy. | |
| 650 | 0 | |a Optoelectronics. | |
| 650 | 0 | |a Crystal growth. | |
| 650 | 0 | |a Piezoelectricity. | |
| 650 | 0 | |a Chemical vapor deposition. | |
| 710 | 2 | |a Universiti Malaya. |b Jabatan Fizik, |e degree granting institution. | |
| 856 | 4 | 1 | |u http://studentsrepo.um.edu.my/12183/ |
| 596 | |a 1 25 | ||
| 900 | |a NSM | ||
| 999 | |a QC3 UM 2020 MOHAA |w LC |c 1 |i A517079520 |f 23/12/2020 |g 1 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 7/12/2020 |1 STEM | ||
| 999 | |a QC3 UM 2020 MOHAA |w LC |c 1 |i A517078745 |f 6/1/2021 |g 1 |l STACKS |m P25UMARCHI |r N |s Y |t CD |u 6/1/2021 |1 STEM |o .STAFF. MST-CD1004 | ||