High quality single-crystalline aluminum nitride grown using pulsed atomic-layer epitaxy technique by MOCVD on sapphire substrate /

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Bibliographic Details
Main Author: Mohd Nazri Abd Rahman (Author)
Format: Thesis Book
Language:English
Published: 2021.
Subjects:
Online Access:http://studentsrepo.um.edu.my/12834/
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100 0 |a Mohd Nazri Abd Rahman,  |e author. 
245 1 0 |a High quality single-crystalline aluminum nitride grown using pulsed atomic-layer epitaxy technique by MOCVD on sapphire substrate /  |c Mohd Nazri bin Abd Rahman. 
264 1 |c 2021. 
300 |a xxii, 187 leaves :  |b illustrations ;  |c 30 cm 
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502 |b Ph.D.  |c Jabatan Fizik, Fakulti Sains, Universiti Malaya  |d 2021. 
504 |a Bibliography: leaves 162-180. 
530 |a Also issued in CD. 
650 0 |a Thin films, Multilayered  |x Technique. 
650 0 |a Epitaxy. 
650 0 |a Metal organic chemical vapor deposition. 
650 0 |a Sapphires. 
650 0 |a Aluminum nitride. 
710 2 |a Universiti Malaya.  |b Jabatan Fizik,  |e degree granting institution. 
856 4 1 |u http://studentsrepo.um.edu.my/12834/ 
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