Growth of non-polar (11-20) A-plane GaN based leds grown on (1-120) R-plane sapphire substrate via MOCVD /

مواد مشابهة

• Crystal quality enhancement of semi-polar (11-22) InGaN/GaN-based LED grown on m-plane sapphire substrate via MOCVD /
  بواسطة: Fadhil, Omar Ayad
  منشور في: (2019)
• Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD /
  بواسطة: Mohd Afiq Anuar
  منشور في: (2020)
• Growth of GaN-based LED on c-plane GaN substrate /
  بواسطة: Sivanathan Pariasamy
  منشور في: (2018)
• The enhancement of indium tin oxide nanocolumnar properties as transparent conducting oxide layer for a blue indium gallium nitride based light emitting diode /
  بواسطة: Najwa Surani
  منشور في: (2015)
• Optimization of AIN/GaN strained-layer superlattice for GaN Epitaxy on Si(111) substrate /
  بواسطة: Yusnizam Yusuf
  منشور في: (2017)