Development of holmium oxide thin film as high-k gate dielectric based on silicon carbide substrate /
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| 主要作者: | |
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| 格式: | Thesis 图书 |
| 语言: | English |
| 出版: |
2022.
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| 实物描述: | xxvi, 220 leaves : illustrations (some colour) ; 30 cm Also issued in CD. |
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| 参考书目: | Bibiliography: leaves 193-219. |