Development of holmium oxide thin film as high-k gate dielectric based on silicon carbide substrate /
Saved in:
| 主要作者: | |
|---|---|
| 格式: | Thesis 圖書 |
| 語言: | English |
| 出版: |
2022.
|
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 實物描述: | xxvi, 220 leaves : illustrations (some colour) ; 30 cm Also issued in CD. |
|---|---|
| 參考書目: | Bibiliography: leaves 193-219. |