Defect studies in gallium arsenide phosphide and confirmation of negative-U property of sulphur related DX center /

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Bibliographic Details
Main Author: Luo, Yingying
Format: Thesis Book
Language:English
Published: 1994.
Subjects:
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008 950824s1994 si v 00 1 eng m
035 |a ABX-1836 
040 |a UMM 
043 |a a-si--- 
090 |a TK7871.15  |b G3Luo 
100 1 0 |a Luo, Yingying. 
245 1 0 |a Defect studies in gallium arsenide phosphide and confirmation of negative-U property of sulphur related DX center /  |c by Luo Yingying. 
260 |c 1994. 
300 |a x, 96 leaves :  |b ill. ;  |c 30 cm. 
502 |a Dissertation (M.Eng.) -- National University of Singapore, 1994. 
504 |a Bibliography: leaves 90-96. 
650 0 |a Gallium arsenide semiconductors  |x Defects. 
650 0 |a Semiconductors  |x Defects. 
650 0 |a DX centers (Solid state physics). 
948 |a 28/08/1995  |b 15/08/1998 
596 |a 1 
999 |a F TK7871.15 G3LUO  |w LC  |c 1  |i A505730561  |l STACKS  |m P01UTAMA  |r Y  |s Y  |t TESIS  |u 1/7/1996