Defect studies in gallium arsenide phosphide and confirmation of negative-U property of sulphur related DX center /
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Format: | Thesis Book |
Language: | English |
Published: |
1994.
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LEADER | 00894cam a2200253 a 4500 | ||
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001 | u380387 | ||
003 | SIRSI | ||
008 | 950824s1994 si v 00 1 eng m | ||
035 | |a ABX-1836 | ||
040 | |a UMM | ||
043 | |a a-si--- | ||
090 | |a TK7871.15 |b G3Luo | ||
100 | 1 | 0 | |a Luo, Yingying. |
245 | 1 | 0 | |a Defect studies in gallium arsenide phosphide and confirmation of negative-U property of sulphur related DX center / |c by Luo Yingying. |
260 | |c 1994. | ||
300 | |a x, 96 leaves : |b ill. ; |c 30 cm. | ||
502 | |a Dissertation (M.Eng.) -- National University of Singapore, 1994. | ||
504 | |a Bibliography: leaves 90-96. | ||
650 | 0 | |a Gallium arsenide semiconductors |x Defects. | |
650 | 0 | |a Semiconductors |x Defects. | |
650 | 0 | |a DX centers (Solid state physics). | |
948 | |a 28/08/1995 |b 15/08/1998 | ||
596 | |a 1 | ||
999 | |a F TK7871.15 G3LUO |w LC |c 1 |i A505730561 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 1/7/1996 |