Numerical and experimental studies of backgating in high electron mobility transistors /

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Bibliographic Details
Main Author: Lee, Kin Man
Format: Thesis Book
Language:English
Published: 1995.
Subjects:
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008 950824s1995 si v 00 1 eng m
035 |a ABX-2021 
040 |a UMM 
090 |a TK7871.95  |b Lee 
100 1 0 |a Lee, Kin Man. 
245 1 0 |a Numerical and experimental studies of backgating in high electron mobility transistors /  |c by Lee Kin Man. 
260 |c 1995. 
300 |a xvi, 141 leaves :  |b ill. ;  |c 30 cm. 
502 |a Dissertation (M.Eng.) -- National University of Singapore, 1995. 
504 |a Bibliography: leaves 134-141. 
650 0 |a Modulation-doped field-effect transistors 
650 0 |a Field-effect transistors. 
948 |a 28/08/1995  |b 25/11/2000 
596 |a 1 
999 |a F TK7871.95 LEE  |w LC  |c 1  |i A505730427  |l STACKS  |m P01UTAMA  |r Y  |s Y  |t TESIS  |u 1/7/1996