New techniques for the characterization of hot-carrier degradation in MOS devices /
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| 主要作者: | |
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| 格式: | Thesis 圖書 |
| 語言: | English |
| 出版: |
1997.
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| 001 | u417613 | ||
| 003 | SIRSI | ||
| 008 | 971111s1997 si v 00 1 eng m | ||
| 035 | |a ACE-1086 | ||
| 040 | |a UMM | ||
| 090 | |a TK7871.95 |b Lea | ||
| 100 | 1 | 0 | |a Leang, Sern Ee. |
| 245 | 1 | 0 | |a New techniques for the characterization of hot-carrier degradation in MOS devices / |c by Leang Sern Ee. |
| 260 | |c 1997. | ||
| 300 | |a xv, 138 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Thesis (Ph.D.) -- National University of Singapore, 1997. | ||
| 504 | |a Bibliography: leaves 113-123. | ||
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors. | |
| 650 | 0 | |a Transistor circuits. | |
| 948 | |a 11/11/1997 |b 17/08/1998 | ||
| 596 | |a 1 | ||
| 999 | |a TK7871.95 LEA |w LC |c 1 |i A506953337 |d 17/12/2007 |e 17/12/2007 |l STACKS |m P01UTAMA |n 3 |r Y |s Y |t TESIS |u 7/2/1998 | ||