Evaluation of hot-carrier degradation in submicrometre MOSFETs by gate capacitance and charge pumping current measurements /
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة كتاب |
| اللغة: | English |
| منشور في: |
1997.
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| الموضوعات: | |
| الوسوم: |
إضافة وسم
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| 001 | u420794 | ||
| 003 | SIRSI | ||
| 008 | 980220s1997 si v 00 1 eng m | ||
| 035 | |a ACE-6314 | ||
| 040 | |a UMM | ||
| 090 | |a TK7871.99 |b M44Tan | ||
| 100 | 1 | 0 | |a Tan, Suat Eng. |
| 245 | 1 | 0 | |a Evaluation of hot-carrier degradation in submicrometre MOSFETs by gate capacitance and charge pumping current measurements / |c Tan Suat Eng. |
| 260 | |c 1997. | ||
| 300 | |a xxxii, 191 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Thesis (Ph.D.) -- National University of Singapore, 1997. | ||
| 504 | |a Bibliography: leaves 159-182. | ||
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors. | |
| 650 | 0 | |a Hot carriers. | |
| 948 | |a 20/02/1998 |b 24/06/2002 | ||
| 596 | |a 1 | ||
| 999 | |a TK7871.99 M44TAN |w LC |c 1 |i A507496188 |d 7/11/2000 |l STACKS |m P01UTAMA |n 1 |r Y |s Y |t TESIS |u 8/4/1998 | ||