Growth and characterization of InGaAlAs quaternary alloy for laser diode applications /
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة كتاب |
| اللغة: | English |
| منشور في: |
1997.
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| الموضوعات: | |
| الوسوم: |
إضافة وسم
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| LEADER | 00831cam a2200241 a 4500 | ||
|---|---|---|---|
| 001 | u421952 | ||
| 003 | SIRSI | ||
| 008 | 980318s1997 si v 00 1 eng m | ||
| 035 | |a ACE-7970 | ||
| 040 | |a UMM | ||
| 090 | |a QC611.8 |b G3Ram | ||
| 100 | 0 | 0 | |a Ramam Akkipeddi |
| 245 | 1 | 0 | |a Growth and characterization of InGaAlAs quaternary alloy for laser diode applications / |c by Ramam Akkipeddi. |
| 260 | |c 1997. | ||
| 300 | |a xvi, 180 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Thesis (Ph.D.) -- National University of Singapore, 1997. | ||
| 504 | |a Includes bibliographical references. | ||
| 650 | 0 | |a Gallium arsenide semiconductors. | |
| 650 | 0 | |a Indium alloys. | |
| 650 | 0 | |a Molecular beam epitaxy. | |
| 948 | |a 18/03/1998 |b 25/11/2000 | ||
| 596 | |a 1 | ||
| 999 | |a QC611.8 G3RAM |w LC |c 1 |i A507502545 |d 31/7/2000 |l STACKS |m P01UTAMA |n 1 |r Y |s Y |t TESIS |u 22/7/1998 | ||