Electrical characterization of N[2]O annealed gate oxide /

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Bibliographic Details
Main Author: Dai, Feng
Format: Thesis Book
Language:English
Published: 1997.
Subjects:
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LEADER 00773cam a2200241 a 4500
001 u422596
003 SIRSI
008 980404s1997 si v 00 1 eng m
035 |a ACE-9016 
040 |a UMM 
090 |a TK7871.85  |b Dai 
100 1 0 |a Dai, Feng. 
245 1 0 |a Electrical characterization of N[2]O annealed gate oxide /  |c by Dai Feng. 
260 |c 1997. 
300 |a xii, 77 leaves :  |b ill. ;  |c 30 cm. 
500 |a [2] is in subscript. 
502 |a Dissertation (M.Eng.) -- National University of Singapore, 1997. 
504 |a Bibliography: leaves 73-74. 
650 0 |a Semiconductors  |x Electric properties 
650 0 |a Nitrous oxide. 
948 |a 04/04/1998  |b 08/04/1999 
596 |a 1 
999 |a TK7871.85 DAI  |w LC  |c 1  |i A507504945  |l STACKS  |m P01UTAMA  |r Y  |s Y  |t TESIS  |u 28/8/1998