Characterization of hot-carrier degradation in submicrometer MOS transistors /
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Format: | Thesis Book |
Language: | English |
Published: |
1997.
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LEADER | 00810cam a2200229 a 4500 | ||
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001 | u425473 | ||
003 | SIRSI | ||
008 | 980617s1997 si v 00 1 eng m | ||
035 | |a ACF-2855 | ||
040 | |a UMM | ||
090 | |a TK7871.99 |b M44Ang | ||
100 | 1 | 0 | |a Ang, Diing Shenp. |
245 | 1 | 0 | |a Characterization of hot-carrier degradation in submicrometer MOS transistors / |c by Ang Diing Shenp. |
260 | |c 1997. | ||
300 | |a xxxi, 231 leaves : |b ill. ; |c 30 cm. | ||
502 | |a Thesis (Ph.D.) -- National University of Singapore, 1997. | ||
504 | |a Includes bibliographical references. | ||
650 | 0 | |a Metal oxide semiconductor field-effect transistors. | |
650 | 0 | |a Hot carriers. | |
948 | |a 17/06/1998 |b 17/08/1998 | ||
596 | |a 1 | ||
999 | |a TK7871.99 M44ANG |w LC |c 1 |i A507920638 |d 10/11/1999 |l STACKS |m P01UTAMA |n 1 |r Y |s Y |t TESIS |u 23/7/1998 |