Characterization of hot-carrier degradation in submicrometer MOS transistors /
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة كتاب |
| اللغة: | English |
| منشور في: |
1997.
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| الموضوعات: | |
| الوسوم: |
إضافة وسم
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| 001 | u425473 | ||
| 003 | SIRSI | ||
| 008 | 980617s1997 si v 00 1 eng m | ||
| 035 | |a ACF-2855 | ||
| 040 | |a UMM | ||
| 090 | |a TK7871.99 |b M44Ang | ||
| 100 | 1 | 0 | |a Ang, Diing Shenp. |
| 245 | 1 | 0 | |a Characterization of hot-carrier degradation in submicrometer MOS transistors / |c by Ang Diing Shenp. |
| 260 | |c 1997. | ||
| 300 | |a xxxi, 231 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Thesis (Ph.D.) -- National University of Singapore, 1997. | ||
| 504 | |a Includes bibliographical references. | ||
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors. | |
| 650 | 0 | |a Hot carriers. | |
| 948 | |a 17/06/1998 |b 17/08/1998 | ||
| 596 | |a 1 | ||
| 999 | |a TK7871.99 M44ANG |w LC |c 1 |i A507920638 |d 10/11/1999 |l STACKS |m P01UTAMA |n 1 |r Y |s Y |t TESIS |u 23/7/1998 | ||