Characterization of hot-carrier degradation in submicrometer MOS transistors /

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Bibliographic Details
Main Author: Ang, Diing Shenp
Format: Thesis Book
Language:English
Published: 1997.
Subjects:
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035 |a ACF-2855 
040 |a UMM 
090 |a TK7871.99  |b M44Ang 
100 1 0 |a Ang, Diing Shenp. 
245 1 0 |a Characterization of hot-carrier degradation in submicrometer MOS transistors /  |c by Ang Diing Shenp. 
260 |c 1997. 
300 |a xxxi, 231 leaves :  |b ill. ;  |c 30 cm. 
502 |a Thesis (Ph.D.) -- National University of Singapore, 1997. 
504 |a Includes bibliographical references. 
650 0 |a Metal oxide semiconductor field-effect transistors. 
650 0 |a Hot carriers. 
948 |a 17/06/1998  |b 17/08/1998 
596 |a 1 
999 |a TK7871.99 M44ANG  |w LC  |c 1  |i A507920638  |d 10/11/1999  |l STACKS  |m P01UTAMA  |n 1  |r Y  |s Y  |t TESIS  |u 23/7/1998