Teh, G. L. (1998). Reliability investigation of MOS devices under high current impulse stressing.
Chicago Style (17th ed.) CitationTeh, Gim Leong. Reliability Investigation of MOS Devices Under High Current Impulse Stressing. 1998.
MLA (8th ed.) CitationTeh, Gim Leong. Reliability Investigation of MOS Devices Under High Current Impulse Stressing. 1998.
Warning: These citations may not always be 100% accurate.