Reliability investigation of MOS devices under high current impulse stressing /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
1998.
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| LEADER | 00800cam a2200229 a 4500 | ||
|---|---|---|---|
| 001 | u430269 | ||
| 003 | SIRSI | ||
| 008 | 981014s1998 si v 00 1 eng m | ||
| 035 | |a ACF-9182 | ||
| 040 | |a UMM | ||
| 090 | |a TK7871.99 |b M44Teh | ||
| 100 | 1 | 0 | |a Teh, Gim Leong. |
| 245 | 1 | 0 | |a Reliability investigation of MOS devices under high current impulse stressing / |c by Teh Gim Leong. |
| 260 | |c 1998. | ||
| 300 | |a xix, 141 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Dissertation (M.Eng.) -- National University of Singapore, 1998. | ||
| 504 | |a Bibliography: leaves 134-136. | ||
| 650 | 0 | |a Metal oxide semiconductors |x Reliability | |
| 650 | 0 | |a Metal oxide semiconductors |x Testing | |
| 948 | |a 14/10/1998 |b 19/12/1998 | ||
| 596 | |a 1 | ||
| 999 | |a TK7871.99 M44TEH |w LC |c 1 |i A508249283 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 7/1/1999 | ||