A study of traps in semi-insulating AlxGa1-xAs grown by molecular beam epitaxy at low substrate temperatures /

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Bibliographic Details
Main Author: Chen, Geng
Format: Thesis Book
Language:English
Published: 1998.
Subjects:
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LEADER 00779cam a2200229 a 4500
001 u434052
003 SIRSI
008 970429s1998 si v 00 1 eng m
035 |a ACG-4497 
040 |a UMM 
090 |a TK3421  |b Che 
100 1 0 |a Chen, Geng. 
245 1 2 |a A study of traps in semi-insulating AlxGa1-xAs grown by molecular beam epitaxy at low substrate temperatures /  |c by Chen Geng. 
260 |c 1998. 
300 |a x, 163 leaves :  |b ill. ;  |c 30 cm. 
502 |a Dissertation (M.Eng.) -- National University of Singapore, 1998. 
504 |a Bibliography: leaves 153-163. 
650 0 |a Insulating materials 
650 0 |a Molecular beam epitaxy. 
948 |a 09/01/1999  |b 14/04/1999 
596 |a 1 
999 |a TK3421 CHE  |w LC  |c 1  |i A508374683  |l STACKS  |m P01UTAMA  |r Y  |s Y  |t TESIS  |u 23/4/1999